DMP1046UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low On-Resistance
I
D MAX
Device V R
(BR)DSS DS(ON) max
T = +25C Low Input Capacitance
A
-3.8A Low Profile, 0.6mm Max Height
61m @ V = -4.5V
GS
P-Channel -12V 81m @ V = -2.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
GS
-2.8A
115m @ V = -1.8V Halogen and Antimony Free. Green Device (Note 3)
GS
Mechanical Data
Description
Case: U-DFN2020-6
This MOSFET is designed to minimize the on-state resistance (R )
DS(on)
Case Material: Molded Plastic, Green Molding Compound.
and yet maintain superior switching performance, making it ideal for
UL Flammability Classification Rating 94V-0
high-efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Applications
e4
Solderable per MIL-STD-202, Method 208
Load Switch Terminals Connections: See Diagram Below
Power Management Functions Weight: 0.0065 grams (Approximate)
Portable Power Adaptors
U-DFN2020-6
D2
D 1
S2
G2
D2
D1
G2
G1
D1
D2
G1
S1
S2
S1
Pin1
Internal Schematic
Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMP1046UFDB -7 U-DFN2020-6 3,000/Tape & Reel
DMP1046UFDB -13 U-DFN2020-6 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP1046UFDB
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -12 V
DSS
Gate-Source Voltage V 8 V
GSS
Steady T = +25C -3.8
A
I A
D
State -3.0
TA = +70C
Continuous Drain Current (Note 5) V = 4.5V
GS
T = +25C -5.0
A
t < 5s A
I
D
-4.0
T = +70C
A
-1
Maximum Continuous Body Diode Forward Current (Note 5) I A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I -15 A
DM
Avalanche Current (L = 0.1mH) I -12 A
AS
Avalanche Energy (L = 0.1mH) E 8 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
Steady State 1.4
Total Power Dissipation (Note 5) P W
D
t < 5s 2.2
Steady State 92
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t < 5s 55
C/W
Thermal Resistance, Junction to Case (Note 5) 20
R
JC
Operating and Storage Temperature Range T T -55 to 150 C
J, STG
Notes: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV -12 - - V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C - - -1.0 A
J IDSS VDS = -12V, VGS = 0V
Gate-Source Leakage - - 100 nA
I V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage -0.4 - -1 V
V V = V , I = -250A
GS(th) DS GS D
- 37 61
V = -4.5V, I = -3.6A
GS D
Static Drain-Source On-Resistance - 47 81 m
R V = -2.5V, I = -3.2A
DS (ON) GS D
-
63 115 V = -1.8V, I = -1.0A
GS D
Diode Forward Voltage V - -0.65 -1.2 V V = 0V, I = -4.5A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
- 915 -
Input Capacitance C pF
iss
V = -6V, V = 0V,
DS GS
- 225 -
Output Capacitance C pF
oss
f = 1.0MHz
- 183 -
Reverse Transfer Capacitance C pF
rss
- 56.9 -
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
- 10.7 - nC
Total Gate Charge (V = -4.5V)
GS
Q
g
17.9 nC
Total Gate Charge (V = -8V)
GS
V = -6V, I = -4.3A
DS D
Gate-Source Charge - 1.7 - nC
Q
gs
Gate-Drain Charge - 3.0 - nC
Q
gd
Turn-On Delay Time - 5.7 - ns
t
D(on)
11.5
Turn-On Rise Time t - - ns V = -6V, V = -4.5V,
r DD GS
27.8
Turn-Off Delay Time t - - ns R = 1.6, R = 1
D(off) L G
26.4
Turn-Off Fall Time t - - ns
f
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2 of 6
February 2015
DMP1046UFDB
Diodes Incorporated
www.diodes.com
Document number: DS37712 Rev. 2 - 2
ADVANCED INFORMATION