DMP1055USW P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX V R (BR)DSS DS(ON) max T = +25C A Low Gate Threshold Voltage 48m V = -4.5V -3.8A GS Low Input Capacitance -12V -3.4A 59m V = -2.5V GS Fast Switching Speed 80m V = -1.8V -2.9A GS Small Surface Mount Package ESD Protected Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high-efficiency power management applications. Case: SOT363 Case Material: Molded Plastic. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe Power Management Functions (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.006 grams (Approximate) Memories, Transistors, etc. D D D S SOT363 6 5 4 G ESD protected 1 2 3 Gate Protection S Diode D D G Internal Schematic Top View Top View Pin out Ordering Information (Note 4) Part Number Case Packaging DMP1055USW-7 SOT363 3,000/Tape & Reel DMP1055USW-13 SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See DMP1055USW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -3.8 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -3.0 TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) -1.7 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) -20 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.66 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State R 192 C/W JA Total Power Dissipation (Note 6) P 1.03 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 123 C/W JA Thermal Resistance, Junction to Case R 39 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -12 - - V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C - - -1.0 A J I V = -12V, V = 0V DSS DS GS Gate-Source Leakage - - 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 - -1 V V V = V , I = -250A GS(TH) DS GS D - 41 48 V = -4.5V, I = -3.0A GS D - 49 59 V = -2.5V, I = -1.0A GS D Static Drain-Source On-Resistance m R DS(ON) - 69 80 V = -1.8V, I = -1.0A GS D - 110 150 V = -1.5V, I = -0.5A GS D Diode Forward Voltage V - -0.7 -1.2 V V = 0V, I = -3.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 1,028 - Input Capacitance C pF iss V = -6V, V = 0V, DS GS - 285 - Output Capacitance pF Coss f = 1.0MHz Reverse Transfer Capacitance - 254 - pF C rss Gate Resistance - 19.6 - R V = 0V, V = 0V, f = 1MHz g DS GS - 13 - nC Total Gate Charge (V = -4.5V) GS Q g - 20.8 - nC Total Gate Charge (V = -8V) GS V = -10V, I = -4.7A DS D Gate-Source Charge - 1.8 - nC Q gs - 4.5 - Gate-Drain Charge Q nC gd 5.6 Turn-On Delay Time t - - ns D(ON) 12.8 Turn-On Rise Time t - - ns R V = -6V, V = -4.5V, DD GS 30.7 Turn-Off Delay Time t - - ns R = 1.6, R = 1 D(OFF) L G 25.4 Turn-Off Fall Time - - ns t F Body Diode Reverse Recovery Time - 31.6 - ns t I = -3.6A, dI/dt = 100A/s RR S Body Diode Reverse Recovery Charge - 7.8 - nC Q I = -3.6A, dI/dt = 100A/s RR S Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMP1055USW December 2016 Diodes Incorporated www.diodes.com Document number: DS38336 Rev. 2 - 2 NEW PRODUCT NENWEW P RPORDOUDCUTC T