DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Drive I D BVDSS RDS(ON) Max T = +25C Low Input Capacitance A Fast Switching Speed 250m V = -10V -2.3A GS -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -2.1A 300m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT223 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Engine Management Systems Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Body Control Electronics Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMP10H400SEQ-13 SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP10H400SEQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -100 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -6.0 C Continuous Drain Current, V = -10V (Note 6) I A GS D State -2.3 T = +25C A Maximum Body Diode Forward Current (Note 6) I -1.9 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -10 A IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 2.0 A Total Power Dissipation (Note 6) W PD T = +70C 1.3 A Thermal Resistance, Junction to Ambient (Note 6) R 62 C/W JA 13.7 Total Power Dissipation (Note 6) T = +25C P W C D C/W Thermal Resistance, Junction to Case (Note 6) R 9.1 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -100 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = -80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.0 -2.2 -3.0 V V = V , I = -250A GS(TH) DS GS D 203 250 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 241 300 V = -4.5V, I =-5A GS D Diode Forward Voltage V -0.9 -1.2 V V = 0V, I = -5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1239 Ciss Output Capacitance 42 pF C V = -25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 28 C rss Gate Resistance 13 R V = 0V, V = 0V, f = 1.0MHz g DS GS 8.4 Total Gate Charge (V = -4.5V) Q GS g Total Gate Charge (V = -10V) Q 17.5 GS g nC VDS = -60V, ID = -5A Gate-Source Charge Q 2.8 gs Gate-Drain Charge Q 3.2 gd Turn-On Delay Time t 9.1 D(ON) Turn-On Rise Time t 14.9 R ns V = -50V, R = 9.1, I = -5A DD g D Turn-Off Delay Time 57.4 t D(OFF) Turn-Off Fall Time 34.4 t F Body Diode Reverse Recovery Time 25.2 ns t V = 0V, I = -5A, di/dt = 100A/s RR GS S Body Diode Reverse Recovery Charge 24.5 nC Q V = 0V, I = -5A, di/dt = 100A/s RR GS S Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 December 2015 DMP10H400SEQ Diodes Incorporated www.diodes.com Document Number DS38396 Rev. 2 - 2