DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D V R (BR)DSS DS(on) max T = +25C C Low Input Capacitance 240m V = -10V -9A GS -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8A 300m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(on) Case: TO252 (DPAK) making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Analog Switch Weight: 0.33 grams (Approximate) D TO252 D G S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Compliance Case Packaging DMP10H400SK3-13 Standard TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP10H400SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -100 V DSS Gate-Source Voltage V 20 V GSS T = +25C -9 Steady C Continuous Drain Current (Note 5) V = -10V I A GS D State -5.5 T = +100C C Maximum Body Diode Forward Current (Note 5) -4 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -15 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 42 C Total Power Dissipation (Note 5) W P D T = +100C 17 C Thermal Resistance, Junction to Ambient (Note 5) R 44 JA C/W Thermal Resistance, Junction to Case (Note 5) 3 RJC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -100 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -1 -3 V V V = V , I = -250A GS(th) DS GS D 190 240 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS (ON) 210 300 V = -4.5V, I =-5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 1239 C iss 42 Output Capacitance C pF V = -25V, V = 0V, f = 1MHz oss DS GS 28 Reverse Transfer Capacitance C rss 13 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 8.4 Total Gate Charge (V = -4.5V) Q GS g 17.5 Total Gate Charge (V = -10V) Q GS g nC V = -60V, I = -5A DS D 2.8 Gate-Source Charge Q gs Gate-Drain Charge 3.2 Q gd Turn-On Delay Time 9.1 t D(on) Turn-On Rise Time 14.9 t r ns V = -50V, R = 9.1, I = -5A DD G D Turn-Off Delay Time 57.4 t D(off) 34.4 Turn-Off Fall Time t f 25.2 Body Diode Reverse Recovery Time t ns V = 0V, I = -5A, dI/dt = 100A/s rr GS S 24.5 Body Diode Reverse Recovery Charge Q nC V = 0V, I = -5A, dI/dt = 100A/s rr GS S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design not subject to production testing. 2 of 6 DMP10H400SK3 October 2014 Diodes Incorporated www.diodes.com Document number: DS35932 Rev. 5 - 2 NEW PRODUCT