DMP1200UFR4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I
D
V R
(BR)DSS DS(ON)
T = +25C
A ESD Protected Gate
Low Input/Output Leakage
-2A
100m @ V = -4.5 V
GS
Fast Switching Speed
160m @ V = -2.5V -1A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-12V
Halogen and Antimony Free. Green Device (Note 3)
200m @ V = -1.8V -0.5A
GS
-0.2A
380m @ VGS = -1.5V
Mechanical Data
Description and Applications
Case: X2-DFN1010-3
This new generation MOSFET is designed to minimize the on-state
resistance (R ) and yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound.
DS(on)
performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0
applications.
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions Terminal Connections: See Diagram
Backlighting
Terminals: Finish - NiPdAu Annealed over Copper Leadframe.
Load Switch Solderable per MIL-STD-202, Method 208
Weight: 0.0015 grams (Approximate)
X2-DFN1010-3
ESD PROTECTED
Bottom View
Pin-out Top view
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMP1200UFR4-7 X2-DFN1010-3 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP1200UFR4
Maximum Ratings (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -12 V
DSS
Gate-Source Voltage V 8 V
GSS
Drain Current (Note 6) Steady T = +25C I 2 A
A D
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 0.48 W
P
D
Thermal Resistance, Junction to Ambient @T = +25C (Note 5) R 266 C/W
A JA
Total Power Dissipation (Note 6) 1.26 W
P
D
Thermal Resistance, Junction to Ambient @T = +25C (Note 6) R 102 C/W
A JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage -12 V
BV V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current I -1 A V = -9.6V, V = 0V
DSS DS GS
Gate-Source Leakage I 10 A V = 6V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V -0.35 -1.0 V V = V , I = -250A
GS(th) DS GS D
V = -4.5V, I = -2A
GS D
70 100
90 160 V = -2.5V, I = -1A
GS D
Static Drain-Source On-Resistance m
R
DS (ON)
115 200
V = -1.8V, I = -0.5A
GS D
145 380
V = -1.5V, I = -0.2A
GS D
Forward Transfer Admittance 40 mS
|Yfs| VDS = -5V, ID = -0.5A
Diode Forward Voltage -1.2 V
V V = 0V, I = -0.2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 514 pF
C
iss
V = -5V, V = 0V, f =
DS GS
Output Capacitance 131 pF
C
oss
1.0MHz
Reverse Transfer Capacitance 60 pF
C
rss
Total Gate Charge 5.8 nC
Q
g
V = -4.5V, V = -5V,
GS DS
Gate-Source Charge 0.8 nC
Q
gs
I = -2A
D
Gate-Drain Charge Q 1.2 nC
gd
Turn-On Delay Time t 15 nS
D(on)
Turn-On Rise Time t 62 nS
r V = -5V, V = -4.5V
DD GEN ,
R = 6
Turn-Off Delay Time t 332 nS GEN
D(off)
Turn-Off Fall Time 166 nS
tf
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6
DMP1200UFR4 October 2014
Diodes Incorporated
www.diodes.com
Document number: DS36557 Rev. 2 - 2
NEW PRODUCT