DMP1245UFCL 12V P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits Typical off board profile of 0.5mm ideally suited for thin V R max I max (BR)DSS DS(on) D applications 29m V = -4.5V -6.6 A GS Low R minimizes conduction losses DS(ON) 2 PCB footprint of 2.56mm 45m V = -2.5V -5.3 A GS -12V 3kV ESD Protected Gate protection against human borne 60m V = -1.8V -4.6 A GS ESD -3.5 A 100m VGS = -1.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Case: X1-DFN1616-6 This device provides high performance, low R P Channel DS(ON) Case Material: Molded Plastic, Green Molding Compound MOSFETs in the thermally and space efficient X1-DFN1616-6 UL Flammability Classification Rating 94V-0 package. The low R of this MOSFET ensures conduction DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 losses are kept making it ideal for use as a: Lead Free Plating (NiPdAu Finish over Copper Leadframe) Terminals: Solderable per MIL-STD-202, Method 208 e4 Battery Disconnect Switch Weight: 0.04 grams (Approximate) Load Switch for Power Management Functions X1-DFN1616-6 D Pin 1 G Gate Protection S Diode Top View Top View Bottom View Device symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMP1245UFCL-7 P5 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See = s I (A) P 1m W D 0 I (A) P =10 s D W DMP1245UFCL Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Continuous Drain Current (Note 6) T = +25C -6.6 A I A D -5.25 T = +70C A -16.67 A Pulsed Drain Current T = 10s I P DM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 613 mW Total Power Dissipation P D (Note 6) 1.7 W (Note 5) 204 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 74 Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. For a device surface mounted on minimum recommended pad layout, in still air conditions the device is measured when operating in a steady state condition. 6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady state condition. 100 100 R I (A) DS(ON) D Single Pulse Limited P =10s R =205C/W 90 W JA R (t)=R *r(t) JA JA T -T =P*R (t) 80 J A JA 10 70 60 I (A) DC D 50 1 I (A) P =10s DW 40 I (A) P =1s DW 30 I (A) P =100ms DW 0.1 20 I (A) P =10ms DW T = 150 C J(MAX) T = 25 C 10 A Single Pulse 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V , DRAIN-SOURCE VOLTAGE (V) t , PULSE DURATION TIME (sec) DS 1 Fig. 2 SOA, Safe Operation Area Fig. 1 Single Pulse Maximum Power Dissipation 1 0.1 0.01 R (t)=r(t) * R JA JA R = 205C/W JA Duty Cycle, D=t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Fig. 03 Transient Thermal Resistance 2 of 7 DMP1245UFCL March 2015 Diodes Incorporated www.diodes.com Document number: DS35505 Rev. 2 - 2 ADVANCE INFORMATION P(pk), PEAK TRANSIENT POWER (W) r(t), TRANSIENT THERMAL RESISTANCE I , DRAIN CURRENT (A) D