DMP1555UFA 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application I D MAX V R 2 (BR)DSS DS(ON) max 0.48mm Package Footprint, 16 Times Smaller than SOT23 T = +25C A 0.8 V = -4.5V Low On-Resistance GS 1.1 V = -2.5V GS Low Input Capacitance -12V -0.2A 3.0 V = -1.8V GS ESD Protected Gate 5.0 V = -1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN0806-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable Load Switch e4 per MIL-STD-202, Method 208 Power Management Functions Weight: 0.00043 grams (Approximate) Portable Power Adaptors D X2-DFN0806-3 G Gate Protection S Diode Top View Bottom View Internal Schematic Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP1555UFA-7B X2-DFN0806-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1555UFA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 DSS V Gate-Source Voltage V 8 GSS Continuous Drain Current (V = -4.5V) (Note 5) I -0.2 A GS D Pulsed Drain Current (Note 6) -1.5 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.36 W D Thermal Resistance, Junction to Ambient (Note 5) 353 C/W R JA Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -12 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C -1 A J I V = -10V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.4 -1.0 V V = V , I = -250A GS(th) DS GS D 0.4 0.8 V = -4.5V, I = -0.2A GS D 0.55 1.1 V = -2.5V, I = -0.1A GS D Static Drain-Source On-Resistance R DS (ON) 0.75 3.0 V = -1.8V, I = -0.05A GS D 1.0 5.0 V = -1.5V, I = -0.01A GS D Diode Forward Voltage V -1.2 V V = 0V, I = -0.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 55.4 pF C iss V = -10V, V = 0V, DS GS Output Capacitance 14.7 pF C oss f = 1MHz Reverse Transfer Capacitance 11.9 pF C rss 0.84 nC Total Gate Charge (V = 4.5V) Q GS g V = -6V, V = -4.5V, DS GS 0.12 Gate-Source Charge Q nC gs I = -0.2A D 0.23 Gate-Drain Charge Q nC gd 16 Turn-On Delay Time t ns D(on) 62 Turn-On Rise Time t ns r V = -6V, V = -4.5V, DD GS 232 I = -0.2A, R = 6 Turn-Off Delay Time t ns D G D(off) 186 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP1555UFA September 2014 Diodes Incorporated www.diodes.com Document number: DS37123 Rev. 2 - 2 NEW PRODUCT