X-On Electronics has gained recognition as a prominent supplier of DMP2002UPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP2002UPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP2002UPS-13 Diodes Incorporated

DMP2002UPS-13 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMP2002UPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 20V P-Ch Enh FET 12Vgss 104W
Datasheet: DMP2002UPS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9103 ea
Line Total: USD 0.91 
Availability - 3398
Ship by Wed. 16 Oct to Mon. 21 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3398
Ship by Wed. 16 Oct to Mon. 21 Oct
MOQ : 1
Multiples : 1
1 : USD 0.9103
10 : USD 0.8378
30 : USD 0.7929
100 : USD 0.7471
500 : USD 0.7261
1000 : USD 0.7175

1552
Ship by Tue. 15 Oct to Thu. 17 Oct
MOQ : 1
Multiples : 1
1 : USD 2.484
10 : USD 2.07
100 : USD 1.6445
250 : USD 1.6215
500 : USD 1.3915
1000 : USD 1.1845
2500 : USD 1.0741

   
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We are delighted to provide the DMP2002UPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP2002UPS-13 and other electronic components in the MOSFETs category and beyond.

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DMP2002UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I Thermally Efficient Package-Cooler Running Applications D BV R DSS DS(ON) T = +25C High Conversion Efficiency C Low R Minimizes On State Losses 1.9m V = -10V -60A DS(ON) GS <1.1mm Package Profile Ideal for Thin Applications -20V 2.4m V = -4.5V -60A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) 3.8m V = -2.5V -60A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation P-Channel Enhancement Mode MOSFET is Mechanical Data designed to minimize R and yet maintain superior switching DS(ON) Case: PowerDI5060-8 (Type K) performance. This device is ideal for use in notebook battery power Case Material: Molded Plastic, Green Molding Compound management and load switch. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Switch Weight: 0.097 grams (Approximate) D PowerDI5060-8 (Type K) S D S D D G S D G S Pin1 Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP2002UPS-13 PowerDI5060-8 (Type K) 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP2002UPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage V 12 V GSS Steady State T = +25C -60 C A (Note 8) -60 T = +70C C Continuous Drain Current, V = -10V (Note 5) I GS D T = +25C -42 A t<10s A -33.5 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -100 A DM Steady State -60 A T = +25C C (Note 8) Continuous Body Diode Forward Current (Note 5) I S t<10s T = +25C -5.6 A A Pulsed Body Diode Forward Current (10s pulse, duty cycle = 1%) -100 A I SM Avalanche Current, L = 0.1mH I -37 A AS Avalanche Energy, L = 0.1mH 69.8 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Steady State 2.3 Total Power Dissipation (Note 5) P W D t<10s 6.25 Steady State 55 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 20 Total Power Dissipation (Note 5) Steady State 104 W P D Thermal Resistance, Junction to Case (Note 5) R 0.9 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG PowerDI is a registered trademark of Diodes Incorporated. 2 of 8 DMP2002UPS July 2016 Diodes Incorporated www.diodes.com Document number: DS37192 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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