DMP2003UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I Thermally Efficient Package-Cooler Running Applications D BV R DSS DS(ON) T = +25C High Conversion Efficiency C Low R Minimizes On State Losses 2.2m V = -10V -150A DS(ON) GS <1.1mm Package Profile Ideal for Thin Applications -20V 2.55m V = -4.5V -120A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) 4.0m V = -2.5V -90A GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize R and DS(ON) yet maintain superior switching performance. This device is ideal for Case: PowerDI 5060-8 use in notebook battery power management and load switch. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Finish - Matte Tin Annealed over Copper Leadframe Switch Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D Pin1 S D D G S G D S Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP2003UPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP2003UPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS T = +25C -150 C I A Continuous Drain Current, V = -10V (Note 7) D GS -120 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -350 A I DM Maximum Continuous Body Diode Forward Current (Note 7) -120 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) -350 A I SM Avalanche Current, L = 0.1mH (Note 8) I -32 A AS Avalanche Energy, L = 0.1mH (Note 8) E 67 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.4 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 90 C/W R JA Total Power Dissipation (Note 6) P 2.7 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 46 C/W R JA Total Power Dissipation (Note 7) P 80 W D Thermal Resistance, Junction to Case (Note 7) 1.5 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -0.5 -1.4 V VGS(TH) VDS = VGS, ID = -250A 1.7 2.2 V = -10V, I = -25A GS D Static Drain-Source On-Resistance 1.9 2.55 m R V = -4.5V, I = -20A DS(ON) GS D 2.5 4.0 V = -2.5V, I = -15A GS D Diode Forward Voltage -0.6 -1.1 V V V = 0V, I = -5A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 8352 pF C iss V = -10V, V = 0V DS GS 1406 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance C 599 pF rss 13.2 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -4.5V) Q 79 nC GS g 177 Total Gate Charge (V = -10V) Q nC GS g V = -10V, I = -20A DS D Gate-Source Charge 14.3 nC Q gs Gate-Drain Charge 19.8 nC Q gd Turn-On Delay Time 7.8 ns t D(ON) Turn-On Rise Time 4.9 ns t V = -10V, V = -4.5V, R DD GEN Turn-Off Delay Time 377 ns RGEN = 1, ID = -10A t D(OFF) 189 Turn-Off Fall Time t ns F Reverse Recovery Time t 49 ns RR I = -10A, di/dt = 100A/s F 39 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2003UPS October 2017 Diodes Incorporated www.diodes.com Document number: DS39597 Rev. 2 - 2