DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Dual P-Channel MOSFET V R (BR)DSS DS(on) max T = +25C A Low On-Resistance 20V -430mA 0.9 V = 4.5V GS Low Gate Threshold Voltage V <1V GS(TH) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Description ESD Protected This MOSFET is designed to minimize the on-state resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (R ) and yet maintain superior switching performance, making it DS(on) Halogen and Antimony Free. Green Device (Note 3) ideal for high-efficiency power management applications. For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), Applications please refer to the related automotive grade (Q-suffix) part. A listing can be found at Load Switch DMP2004DWK Marking Information PAB = Product Type Marking Code YM or YM = Date Code Marking PAB YM PAB YM Y or Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2007 ~ 2020 2021 2022 2023 2024 2025 2026 2027 Code U ~ H I J K L M N O Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 8 V V GSS T = +25C -430 A Drain Current (Note 5) VGS = -4.5V mA I D -310 T = +85C A Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient 500 C/W R JA Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1.0 A I V = -20V, V = 0V DSS DS GS Gate-Source Leakage A I 1.0 V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -0.5 -1.0 V V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -430mA 0.7 0.9 GS D Static Drain-Source On-Resistance R 1.1 1.4 V = -2.5V, I = -300mA DS (ON) GS D 1.7 2.0 V = -1.8V, I = -150mA GS D Forward Transfer Admittance Y 200 ms V = 10V, I = 0.2A fs DS D Diode Forward Voltage (Note 5) V -0.5 -1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 175 pF C iss V = -16V, V = 0V DS GS Output Capacitance 30 pF C oss f = 1.0MHz Reverse Transfer Capacitance 20 pF C rss Notes: 5. Diodes Inc. sGree policy can be found on our website at