DMP2012SN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D Low Gate Threshold Voltage V R (BR)DSS DS(on) T = +25C A Low Input Capacitance Fast Switching Speed 0.3 V = -4.5V -0.9A GS -20V ESD Protected Gate 0.5 V = -2.5V -0.7A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for Mechanical Data high efficiency power management applications. Case: SC59 Case Material: Molded Plastic, Green Molding Applications Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. Power management functions e3 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Drain SC59 D Gate G S Gate Protection Source Top View Diode Equivalent Circuit Top View Pin-Out ESD PROTECTED Ordering Information (Note 4) Part Number Compliance Case Packaging DMP2012SN-7 Standard SC59 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2012SN Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 5) Steady State I -0.7 A D Pulsed Drain Current (Note 6) I -2.8 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 500 mW D Thermal Resistance, Junction to Ambient 250 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -10 A I V = -20V, V = 0V DSS DS GS Gate-Body Leakage A I 10 V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.5 -1.2 V V V = V , I = -250A GS(th) DS GS D 0.23 0.30 V = -4.5V, I = -0.4A GS D Static Drain-Source On-Resistance R DS (ON) 0.37 0.50 V = -2.5V, I = -0.4A GS D Forward Transfer Admittance Y 1.5 S V = -10V, I = -0.4A fs DS D Diode Forward Voltage (Note 7) V -0.8 -1.1 V V = 0V, I = -0.7A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 178.5 pF iss V = -10V, V = 0V DS GS Output Capacitance 26.3 pF C oss f = 1.0MHz Reverse Transfer Capacitance 18.8 pF C rss SWITCHING CHARACTERISTICS Turn-On Delay Time 10.4 ns t D(ON) Turn-Off Delay Time 175 ns t V = -10V, I = -0.4A, D(OFF) DD D Turn-On Rise Time 22.3 ns V = -5.0V, R = 50 t GS GEN r Turn-Off Fall Time t 64 ns f Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 September 2013 DMP2012SN Diodes Incorporated www.diodes.com Document number: DS30790 Rev. 7 - 2