DMP2021UFDF
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
0.6mm Profile Ideal for Low Profile Applications
I max
D
V R max
(BR)DSS DS(ON) 2
PCB Footprint of 4mm
T = +25C
A
-9.0A
16m @ V = -4.5V Low Gate Threshold Voltage
GS
-20V
22m @ V = -2.5V -7.7A
GS Low On-Resistance
ESD protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET is designed to minimize on-state resistance (R ) Case: U-DFN2020-6
DS(ON)
and yet maintain superior switching performance, making it ideal for Case Material: Molded Plastic, Green Molding Compound.
high-efficiency power management applications. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Battery Management Application Terminals: Finish NiPdAu over Copper Leadframe.
e4
Power Management Functions Solderable per MIL-STD-202, Method 208
DC-DC Converters Weight: 0.007 grams (Approximate)
D
U-DFN2020-6
G
ESD PROTECTED
Pin1
Gate Protection
S
Diode
Pin Out
Top View
Bottom View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMP2021UFDF-7 U-DFN2020-6 3,000/Tape & Reel
DMP2021UFDF-13 U-DFN2020-6 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP2021UFDF
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -20 V
DSS
Gate-Source Voltage V 8 V
GSS
Steady TA = +25C -9.0
A
I
D
State -7.2
T = +70C
A
Continuous Drain Current (Note 6) V = -4.5V
GS
T = +25C -11.1
A
t<10s I A
D
-8.9
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle = 1%) I -60 A
DM
Continuous Source-Drain Diode Current (Note 6) T = +25C -2.4 A
A I
S
Avalanche Current (Note 7) L = 0.1mH -27 A
I
AS
Avalanche Energy (Note 7) L = 0.1mH 38 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
0.73
T = +25C
A
Total Power Dissipation (Note 5) W
PD
T = +70C 0.47
A
Steady State 172
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 121
T = +25C 2.02
A
Total Power Dissipation (Note 6) W
P
D
T = +70C 1.30
A
Steady State 63
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 42
C/W
Thermal Resistance, Junction to Case (Note 6) Steady State 18
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I -1 A V = -20V, V = 0V
J DSS DS GS
Gate-Source Leakage I 10 A V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V -0.35 -1.0 V V = V , I = -250A
GS(th) DS GS D
12 16
V = -4.5V, I = -7.0A
GS D
15 22
V = -2.5V, I = -5.0A
GS D
Static Drain-Source On-Resistance R m
DS (ON)
19 40
V = -1.8V, I = -3.0A
GS D
21 80
V = -1.5V, I = -1.0A
GS D
Diode Forward Voltage -0.8 -1.2 V
V V = 0V, I = -1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 2,760
C
iss
V = -15V, V = 0V,
DS GS
262
Output Capacitance C pF
oss
f = 1.0MHz
220
Reverse Transfer Capacitance C
rss
16 30
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
34
Total Gate Charge (V = -4.5V) Q
GS g
59
Total Gate Charge (V = -8V) Q
GS g
nC
V = -15V, I = -4.0A
DS D
3.5
Gate-Source Charge
Q
gs
Gate-Drain Charge 8.3
Q
gd
Turn-On Delay Time 7.5
t
D(on)
Turn-On Rise Time 25
t V = -15V, V = -4.5V,
r DS GS
ns
Turn-Off Delay Time 125
t R = 1, I = -4.0A
D(off) G D
96
Turn-Off Fall Time t
f
Reverse Recovery Time t 48 ns I = -1.0A, di/dt = 100A/s
rr F
Reverse Recovery Charge Q 33 nC I = -1.0A, di/dt = 100A/s
rr F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
April 2015
DMP2021UFDF
Diodes Incorporated
www.diodes.com
Document number: DS37195 Rev. 3 - 2
ADVANCE INFORMATION