DMP2022LSSQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I max Low On-Resistance
D
BV R max
DSS DS(ON)
T = +25C Low Gate Threshold Voltage
A
Low Input Capacitance
13m @ V = -10V -9.3A
GS
Fast Switching Speed
-20V 16m @ V = -4.5V -8.3A
GS
Low Input/Output Leakage
22m @ V = -2.5V -7.2A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SO-8
Applications
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Backlighting
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions
Terminals Connections: See Diagram
DC-DC Converters
Terminals: Finish - Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074g (Approximate)
SO-8
S D
S D
S D
G
D
Top View
Top View
Internal Schematic
Ordering Information (Note 5)
Part Number Compliance Case Packaging
DMP2022LSSQ-13 Automotive SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
DMP2022LSSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V -20 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = + 2 5 C -9.3
A
Drain Current (Note 6) I A
D
State -7.4
T = +70C
A
Pulsed Drain Current (Note 7) -35 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P 1.6 W
D
Thermal Resistance, Junction to Ambient 74 C/W
R
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage -20 V
BV V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current -1 A
I V = -20V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V -0.6 -0.77 -1.1 V V = V , I = -250A
GS(TH) DS GS D
8 13
V = -10V, I = -10A
GS D
Static Drain-Source On-Resistance 11 16 m
R V = -4.5V, I = -9A
DS(ON) GS D
17 22
V = -2.5V, I = -8A
GS D
Forward Transconductance g 28 S V = -10V, I = -10A
fs DS D
Diode Forward Voltage (Note 8) V -0.5 -0.68 -1.2 V V = 0V, I = -3A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 2575 pF
C
iss
V = -10V, V = 0V
DS GS
Output Capacitance 326 pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 261 pF
C
rss
Gate Resistance 10.9
R V = 0V, V = 0V, f = 1MHz
G GS DS
SWITCHING CHARACTERISTICS (Note 9)
28.1 V = -10V, V = -4.5V, I = -10A
DS GS D
Total Gate Charge Q
g
60.2
V = -10V, V = -10V, I = -10A
DS GS D
nC
Gate-Source Charge Q 5.9 V = -10V, V = -10V, I = -10A
gs DS GS D
Gate-Drain Charge Q 7.4 V = -10V, V = -10V, I = -10A
gd DS GS D
Turn-On Delay Time t 4.5 15
D(ON)
Turn-On Rise Time t 3.3 20
R V = -15V, I = -1A, V = -10V,
DD D GS
ns
Turn-Off Delay Time 197 216 R = 6
t GEN
D(OFF)
Turn-Off Fall Time 60.5 153
t
F
Notes: 6. Device mounted on 2 oz. Copper pads on FR-4 PCB.
7. Pulse width 10S, Duty Cycle 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMP2022LSSQ July 2018
Diodes Incorporated
www.diodes.com
Document number: DS36875 Rev. 2 - 2