DMP2033UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = -4.5V, T = +25C) Features and Benefits GS A LD-MOS Technology with the Lowest Figure of Merit: V R Q Q I DSS DS(on) g gd D R = 28m to Minimize On-State Losses DS(on) -20V 28m 5.4nC 1.5nC -5.8A Q = 5.4nC for Ultra-Fast Switching g V = -0.6V typ. for a Low Turn-On Potential gs(th) CSP with Footprint 1.5mm 1.5mm Description and Applications Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate This new generation MOSFET is designed to minimize the on- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) state resistance (R ) and yet maintain superior switching DS(on) Halogen and Antimony Free. Green Device (Note 3) performance, making it ideal for high-efficiency power management Qualified to AEC-Q101 Standards for High Reliability applications. Mechanical Data Applications Case: U-WLB1515-9 Battery Management Terminal Connections: See Diagram Below Load Switch Weight: 0.0018 grams (Approximate) Battery Protection G D S D D S D S S Equivalent Circuit ESD PROTECTED TO 3kV Top-View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP2033UCB9-7 U-WLB1515-9 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2033UCB9 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V -6 V GSS Steady T = +25C -4.2A A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -3.3A T = +70C A Steady T = +25C -5.8A A A Continuous Drain Current (Note 6) V = -4.5V I GS D State -4.5A T = +70C A Pulsed Drain Current I -30 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.0 W P D Total Power Dissipation (Note 6) 1.8 W P D Thermal Resistance, Junction to Ambient (Note 5) 126.8 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) R 69 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D Gate-Source Breakdown Voltage BV -6.1 - - V I = -250A, V = 0V GSS GS DS Zero Gate Voltage Drain Current T = +25C I - - -1 A V = -16V, V = 0V c DSS DS GS Gate-Source Leakage - - -100 nA I V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -0.6 -1.1 V V V = V , I = -250A GS(th) DS GS D 28 33 V = -4.5V, I = -2A GS D Static Drain-Source On-Resistance R - 35 45 m V = -2.5V, I = -2A DS (ON) GS D 45 65 V = -1.8V, I = -2A GS D Forward Transfer Admittance Y - 10.8 - S V = -10V, I = -2A fs DS D Diode Forward Voltage (Note 6) V - -0.7 -1 V V = 0V, I = -2A SD GS S 15 Reverse Recovery Charge Q - - nC rr V = -9.5V, I = -2A, dd F Reverse Recovery Time - 25 - ns di/dt = 200A/s t rr DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 382 500 pF C iss V = -10V, V = 0V, DS GS Output Capacitance - 204 270 pF C oss f = 1.0MHz Reverse Transfer Capacitance - 86 115 pF C rss Series Gate Resistance R 26.1 35 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (4.5V) Q - 5.4 7.0 nC g V = -4.5V, V = -10V, GS DS Gate-Source Charge Q - 0.7 - nC gs I = -2A D Gate-Drain Charge Q - 1.5 - nC gd Turn-On Delay Time t - 8.5 - ns D(on) Turn-On Rise Time t - 11.8 - ns r V = -10V, V = -4.5V, DD GS Turn-Off Delay Time - 47 - ns I = -2A, R = 2, t DS G D(off) Turn-Off Fall Time - 56 - ns t f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 2 6. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMP2033UCB9 January 2016 Diodes Incorporated www.diodes.com Document number: DS35904 Rev. 4 - 2 NEW PRODUCT