DMP2033UVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance V R (BR)DSS DS(ON) max T = +25C A Low Input Capacitance 65m V = -4.5V -4.2A GS Fast Switching Speed -20V 100m V = -2.5V -3.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Mechanical Data DS(ON) ideal for high efficiency power management applications. Case: TSOT26 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Terminals: Finish MatteTin annealed over Copper leadframe. Motor Control e3 Solderable per MIL-STD-202, Method 208 Weight: 0.0013 grams (approximate) TSOT26 DD1 6 DD2 5 GS 3 4 Top View Top View Pin-Out Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2033UVT-7 TSOT26 3000/Tape & Reel DMP2033UVT -13 TSOT26 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2033UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = +25C -4.2 Steady A Continuous Drain Current (Note 6) A I D State -3.4 T = +70C A Pulsed Drain Current (Note 6) -10 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.2 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 100 C/W JA Total Power Dissipation (Note 6) 1.7 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 74 C/W JA Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1.0 A V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.5 -0.9 V V V = V , I = -250A GS(th) DS GS D 45 65 V = -4.5V, I = -4.2A GS D Static Drain-Source On-Resistance 57 100 m R V = -2.5V, I = -3.4A DS(ON) GS D 80 200 V = -1.8V, I = -2A GS D Forward Transfer Admittance Y 9 S V = -5V, I = -4A fs DS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 845 pF iss = -15V, V = 0V V DS GS Output Capacitance C 72 pF oss f = 1.0MHz Reverse Transfer Capacitance C 63 pF rss SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Q 10.4 nC g V = -4.5V, V = -4V, GS DS Gate-Source Charge Q 1.5 nC gs I = -3.5A D Gate-Drain Charge Q 1.9 nC gd Turn-On Delay Time 6.5 ns t D(on) Turn-On Rise Time 13.4 ns t r V = -4V, V = -4.5V, DS GS R = 6, I = -1A Turn-Off Delay Time 51.5 ns G D t D(off) Turn-Off Fall Time 21.8 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 5 March 2014 DMP2033UVT Diodes Incorporated www.diodes.com Document number: DS36617 Rev. 2 - 2 ADVANCED INFORMATION