DMP2035UFCL 20V P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits Typical Off Board Profile of 0.575mm - Ideally Suited for Thin I max D V R max DSS DS(ON) T = +25C A Applications Low R - Minimizes Conduction Losses 24m V = -4.5V DS(ON) GS -6.6 A -20V 2 PCB Footprint of 2.56mm 31m V = -2.5V -5.8 A GS ESD Protected Gate 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: U-DFN1616-6 resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Lead Free Plating (NiPdAu Finish over Copper Leadframe). Analog Switches Terminals: Solderable per MIL-STD-202, Method 208 e4 Weight: 0.04 grams (Approximate) U-DFN1616-6 Pin 1 ESD PROTECTED Top View Bottom View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Case Packaging DMP2035UFCL-7 U-DFN1616-6 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2035UFCL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS Continuous Drain Current (Note 6) Steady T = +25C -6.6 A I A D State -5.3 T = +70C A Pulsed Drain Current (380s Pulse, 1% Duty Cycle)(Note 7) -40 A I DM Maximum Continuous Body Diode Forward Current (Note 6) -1.7 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 0.74 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 169 C/W A JA Power Dissipation (Note 6) P 1.6 W D 79 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -20 - - V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - -1.0 A V = -16V, V = 0V J DSS DS GS Zero Gate Voltage Drain Current T = +150C (Note 8) I - - -100 A V = -16V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -0.4 - -1.0 V V = V , I = -250A GS(TH) DS GS D V = -4.5V, I = -8.0A GS D 19 24 Static Drain-Source On-Resistance R - 24 31 m V = -2.5V, I = -7.0A DS(ON) GS D 31 45 V = -1.8V, I = -6.0A GS D Diode Forward Voltage -0.5 -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 1,610 2,200 pF C iss V = -10V, V = 0V DS GS Output Capacitance - 157 240 pF C oss f = 1.0MHz Reverse Transfer Capacitance - 145 220 pF C rss - 9.45 14.5 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS - 29 44 Total Gate Charge (V = -8V) Q nC GS g - 15.4 21 Total Gate Charge (V = -4.5V) Q nC GS g V = -10V, DS - 2.5 3.8 Gate-Source Charge Q nC I = -4A gs D - 3.3 5 Gate-Drain Charge Q nC gd - 16.8 34 Turn-On Delay Time ns t D(ON) Turn-On Rise Time - 12.4 25 ns t V = -20V, V = -10V, R DS GS Turn-Off Delay Time - 94.1 188 ns R = 6.0, I = -6A t G D D(OFF) Turn-Off Fall Time - 42.4 85 ns t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2035UFCL September 2015 Diodes Incorporated www.diodes.com Document number: DS37917 Rev. 1 - 2 ADVANCE INFORMATION