DMP2038USS 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 38m V = -4.5V -6.5A GS -20V Fast Switching Speed 56m V = -2.5V -5.0A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state Case: SO-8 resistance (R ) and yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound. DS(ON) performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Power Management Functions Terminals: Finish - Matte Tin annealed over Copper lead DC-DC Converters frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072g (approximate) D S D SO-8 D S G S D G D S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMP2038USS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2038USS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = +25C Drain Current (Note 6) Steady A -6.5 A I D State -5.2 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) -25 A I DM Maximum Continuous Body Diode Forward Current (Note 6) IS 2 A Avalanche Current (Note 7) L=0.3mH IAS 13.2 A Avalanche Energy (Note 7) L=0.3mH EAS 26 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 6) 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -0.4 -1.1 V V = V , I = -250A GS(th) DS GS D 24 38 V = -4.5V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 33 56 V = -2.5V, I = -4.3A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1496 pF iss V = -15V, V = 0V DS GS Output Capacitance 130 pF C oss f = 1.0MHz Reverse Transfer Capacitance 116 pF C rss Total Gate Charge 14.4 Q g V = -10V, V = -4.5V DS GS Gate-Source Charge 2.6 nC Q gs I = -4.5A D Gate-Drain Charge Q 2.7 gd Turn-On Delay Time t 13.7 D(on) Turn-On Rise Time t 14.0 r V = -10V, V = -4.5V, DD GS ns R = 6 , R = 10 , I = -1A Turn-Off Delay Time t 79.1 G L D D(off) Turn-Off Fall Time t 35.5 f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. I and E rating are based on low frequency and duty cycles to keep T = +25C AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 April 2014 DMP2038USS Diodes Incorporated www.diodes.com Document number: DS36919 Rev. 2 - 2 NEW PRODUCT