DMP2039UFDE4 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I D V R (BR)DSS DS(on) max 0.4mm profile ideal for low profile applications T = 25C A 2 PCB footprint of 4mm 26m V = -4.5V -7.3 Low Input Capacitance GS -25V ESD Protected Gate 40m V = -1.8V -6.0 GS Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: X2-DFN2020-6 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Load Switching Terminals: Finish NiPdAu over Copper leadframe. Solderable Battery Management Application per MIL-STD-202, Method 208 Power Management Functions Weight: 0.006 grams (approximate) Drain X2-DFN2020-6 Gate Gate Protection Source Diode Bottom View Top View Bottom View Equivalent Circuit ESD PROTECTED Internal Schematic Ordering Information (Note 3) Part Number Case Packaging DMP2039UFDE4-7 X2-DFN2020-6 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.s Green policy can be found on our website at DMP2039UFDE4 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -25 V DSS Gate-Source Voltage V 8 V GSS Steady T = 25C -7.3 A I A D State -5.8 T = 70C A Continuous Drain Current (Note 5) V = -4.5V GS T = 25C -9.2 A t<5s A I D -7.3 T = 70C A Steady T = 25C -6.0 A I A D State -4.7 T = 70C A Continuous Drain Current (Note 5) V = -1.8V GS T = 25C -7.6 A t<5s A I D -6.0 T = 70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -60 A DM Continuous Source-Drain Diode Current I -2.0 A S Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units T = 25C 0.69 A Total Power Dissipation (Note 4) P W D T = 70C 0.44 A Steady state 182 Thermal Resistance, Junction to Ambient (Note 4) R C/W JA t<5s 113 T = 25C 2.4 A Total Power Dissipation (Note 5) P W D 1.5 T = 70C A Steady state 52 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 33 Thermal Resistance, Junction to Case (Note 5) Steady state R 9.1 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -25 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -25V, V = 0V DSS DS GS Gate-Source Leakage A I 10 V = 8.0V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -0.4 -1.0 V V V = V , I = -250A GS(th) DS GS D 19 26 V = -4.5V, I = -6.4A GS D 24 33 V = -2.5V, I = -4.8A GS D Static Drain-Source On-Resistance m R DS (ON) 29 40 V = -1.8V, I = -2.5A GS D 35 70 V = -1.5V, I = -1.5A GS D Forward Transfer Admittance Y 14 mS V = -5V, I = -4A fs DS D Diode Forward Voltage (Note 5) V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 2530 pF iss V = -15V, V = 0V DS GS Output Capacitance 203 pF C oss f = 1.0MHz Reverse Transfer Capacitance 177 pF C rss Gate Resistance 9.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 28.2 Q g Gate-Source Charge Q 48.7 nC V = -15V, I = -4.0A gs DS D Gate-Drain Charge Q 3.2 gd Turn-On Delay Time t 5.0 D(on) Turn-On Rise Time t 15.1 r V = -15V, V = -4.5V, R = 1 , DD GS G nS Turn-Off Delay Time t 23.5 I = -4.0A D(off) D Turn-Off Fall Time t 137.6 f Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6. Short duration pulse test used to minimize self-heating effect 7. Guaranteed by design. Not subject to production testing. 2 of 6 March 2012 DMP2039UFDE4 Diodes Incorporated www.diodes.com Document number: DS35675 Rev. 3 - 2