DMP2040USS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 33m V = -4.5V -7.0A GS -20V Fast Switching Speed 52m V = -2.5V -5.5A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ) and yet maintain superior switching performance, making DS(ON) Case Material: Molded Plastic, Green Molding Compound. it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals Connections: See Diagram DC-DC Converters Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.072g (Approximate) D S D SO- 8 S D G S D D G S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging P DMP2040USS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP2040USS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit -20 Drain-Source Voltage V V DSS 12 Gate-Source Voltage V V GSS -7.0 T = +25C Steady A A Continuous Drain Current (Note 6) V = -4.5V I GS D State -5.5 T = +70C A -15 T = +25C Steady C Continuous Drain Current (Note 7) V = -4.5V I A GS D State -12 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -30 A I DM Continuous Source-Drain Diode Current (Note 6) -2.2 A I S Avalanche Current (Note 8) L = 0.1mH -16 A I AS Avalanche Energy (Note 8) L = 0.1mH 13.5 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.4 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 91 C/W JA Total Power Dissipation (Note 6) T = +25C P 1.9 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 64 C/W R JA Thermal Resistance, Junction to Case (Note 7) Steady State 13.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -0.6 -1.5 V V = V , I = -250A GS(TH) DS GS D 26 33 V = -4.5V, I = -8.9A GS D Static Drain-Source On-Resistance R m DS(ON) 37.5 52 V = -2.5V, I = -6.9A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -2.9A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 834 iss V = -10V, V = 0V, DS GS Output Capacitance pF C 133 oss f = 1.0MHz Reverse Transfer Capacitance C 105 rss Gate Resistance R 4.9 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q 8.6 GS g Total Gate Charge (V = -8V) Q 19 GS g nC V = -6V, I = -8.9A DS D Gate-Source Charge Q 1.5 gs Gate-Drain Charge Q 2.5 gd Turn-On Delay Time t 5.8 D(ON) Turn-On Rise Time 7.7 t V = -6V, R = 6 R DD L ns Turn-Off Delay Time 28.1 V = -4.5V, R = 6, I = -1A t GS g D D(OFF) Turn-Off Fall Time 14.6 t F Body Diode Reverse Recovery Time 9.8 ns t I = -8.9A, di/dt = -100A/s RR F Body Diode Reverse Recovery Charge 2.7 nC Q I = -8.9A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2040USS September 2019 Diodes Incorporated www.diodes.com Document number: DS40054 Rev. 4 - 2 NEW PRODUCT ADVANCED INFORMATION