DMP2040UVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D BV R DSS DS(ON) Max T = +25C Low On-Resistance A Fast Switching Speed 38m V = -4.5V GS -5.5A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 52m V = -2.5V -5.0A GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: TSOT26 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish - Matte Tin Annealed over Copper Leadframe Motor Control e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.013 grams (Approximate) Analog Switch D TSOT26 D 1 6 D D 2 5 D G G S 3 4 S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMP2040UVT-7 TSOT26 3,000/Tape & Reel DMP2040UVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2040UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit -20 Drain-Source Voltage V V DSS 12 Gate-Source Voltage V V GSS Steady T = +25C -5.5 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -4.5 T = +70C A Steady T = +25C -13 C A Continuous Drain Current (Note 7) V = -4.5V I GS D State -10 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -40 A DM Continuous Source-Drain Diode Current (Note 6) -2.2 A I S Avalanche Current (Note 8) L = 0.1mH I -16 A AS Avalanche Energy (Note 8) L = 0.1mH E 13.5 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 105 C/W R JA Total Power Dissipation (Note 6) T = +25C P 1.5 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 80 C/W JA Thermal Resistance, Junction to Case (Note 7) Steady State R 16 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -16V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -0.6 -1.5 V V V = V , I = -250A GS(TH) DS GS D 27 38 V = -4.5V, I = -8.9A GS D Static Drain-Source On-Resistance m R DS(ON) 38 52 V = -2.5V, I = -6.9A GS D -0.7 Diode Forward Voltage V -1.2 V V = 0V, I = -2.9A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 834 iss V = -10V, V = 0V, DS GS Output Capacitance C 133 pF oss f = 1.0MHz Reverse Transfer Capacitance C 105 rss Gate Resistance 4.9 RG VDS = 0V, VGS = 0V, f = 1.0MHz 8.6 Total Gate Charge (VGS = -4.5V) Qg 19 Total Gate Charge (V = -8V) Q GS g nC V = -6V, I = -8.9A DS D Gate-Source Charge 1.5 Q gs Gate-Drain Charge 2.5 Q gd Turn-On Delay Time 5.8 t D(ON) Turn-On Rise Time t 7.7 V = -6V, R = 6 R DD L ns Turn-Off Delay Time t 28.1 V = -4.5V, R = 6, I = -1A D(OFF) GS G D Turn-Off Fall Time t 14.6 F Body Diode Reverse Recovery Time t 9.8 ns I = -8.9A, di/dt = -100A/s RR F Body Diode Reverse Recovery Charge Q 2.7 nC I = -8.9A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2040UVT November 2017 Diodes Incorporated www.diodes.com Document number: DS40060 Rev. 2 - 2 ADVANCED INFORMATION