DMP2045UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max D Low On-Resistance BV R Max DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 45m V = -4.5V GS -4.7A Low Input/Output Leakage -20V ESD Protected 90m V = -1.8V -3.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (RDS(ON)) and yet maintain superior switching performance, making it Case: X2-DFN2015-3 ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe. DC-DC Converters e4 Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D S G D G Gate Protection ESD protected Gate S Diode TOP VIEW BOTTOM VIEW Internal Schematic (Top View) Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2045UFY4-7 X2-DFN2015-3 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP2045UFY4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -4.7 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -3.8 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -1 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -25 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.67 W D Steady Thermal Resistance, Junction to Ambient (Note 5) 190 C/W R JA State Total Power Dissipation (Note 6) 1.49 W P D Steady Thermal Resistance, Junction to Ambient (Note 6) 84 R JA State C/W Thermal Resistance, Junction to Case (Note 6) R 14.5 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8.0V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.3 -1.0 V V = V , I = -250A GS(TH) DS GS D 34 45 V = -4.5V, I = -4.0A GS D 44 58 V = -2.5V, I = -3.5A GS D Static Drain-Source On-Resistance R m DS(ON) 56 90 VGS = -1.8V, ID = -0.1A 80 160 V = -1.5V, I = -0.1A GS D Diode Forward Voltage -0.6 -1.2 V V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 634 pF C iss V = -10V, V = 0V DS GS 81 Output Capacitance C pF oss f = 1.0MHz 66 Reverse Transfer Capacitance C pF rss 20 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz g DS GS 6.8 Total Gate Charge Q nC g V = -4.5V, V = -10V GS DS 0.7 Gate-Source Charge Q nC gs ID = -4A 1.6 Gate-Drain Charge Q nC gd Turn-On Delay Time 4.2 ns tD(ON) Turn-On Rise Time 3.4 ns t R V = -10V, V = -4.5V, DS GS Turn-Off Delay Time 22.7 ns R = 2.5, R = 3.0, I = -1A t D g D D(OFF) Turn-Off Fall Time 9.6 ns t F Reverse Recovery Time t 1.8 ns I = -1.0A, di/dt = 100A/s RR F Reverse Recovery Charge Q 9.4 nC I = -1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2045UFY4 March 2018 Diodes Incorporated www.diodes.com Document number: DS40494 Rev. 2 - 2 NEW PRODUCT