DMP2045UQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D BV R DSS DS(ON) max Low Input Capacitance T = +25C A Fast Switching Speed 45m V = -4.5V -4.3A GS Low Input/Output Leakage -20V 58m V = -2.5V -3.8A GS ESD Protected Gate 90m V = -1.8V -3.1A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMP2045UQ is suitable for automotive applications Description requiring specific change control it is AEC-Q101 qualified, This new generation MOSFET is designed to minimize the on-state PPAP capable, and manufactured in IATF 16949 certified resistance (R ) and yet maintain superior switching performance, DS(ON) facilities. making it ideal for high efficiency power management applications. DMP2045UQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -4.3 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -3.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -1.2 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -25 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.8 W PD Thermal Resistance, Junction to Ambient (Note 5) Steady State 154 C/W R JA Total Power Dissipation (Note 6) W P 1.2 D Thermal Resistance, Junction to Ambient (Note 6) Steady State 98 C/W R JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 V BVDSS VGS = 0V, ID = -250A -1 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8.0V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.3 -1.0 V V V = V , I = -250A GS(TH) DS GS D 32 45 V = -4.5V, I = -4.0A GS D Static Drain-Source On-Resistance R 42 58 m V = -2.5V, I = -3.5A DS(ON) GS D 54 90 V = -1.8V, I = -1.0A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 634 pF iss V = -10V, V = 0V DS GS Output Capacitance C 81 pF oss f = 1.0MHz Reverse Transfer Capacitance C 66 pF rss Gate Resistance 20 Rg VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge 6.8 nC Q g V = -4.5V, V = -10V GS DS Gate-Source Charge 0.7 nC Q gs I = -4A D Gate-Drain Charge Q 1.6 nC gd Turn-On Delay Time t 4.2 ns D(ON) Turn-On Rise Time t 3.4 ns R V = -10V, V = -4.5V, DD GS R = 3.3, R = 1 Turn-Off Delay Time t 23 ns L G D(OFF) Turn-Off Fall Time t 9.6 ns F Reverse Recovery Time t 1.8 ns I = -1.0A, di/dt = 100A/s RR F Reverse Recovery Charge Q 9.4 nC I = -1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2045UQ October 2019 Diodes Incorporated www.diodes.com Document number: DS41642 Rev. 2 - 2