DMP2047UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = -4.5V, T = +25C) Features GS A LD-MOS Technology with the Lowest Figure of Merit: V R Q Q I DSS DS(on) g gd D R = 40m to Minimize On-State Losses DS(on) -20V 40m 2.3nC 0.4nC -4.1A Q = 2.3nC for Ultra-Fast Switching g V = -0.8V typ. for a Low Turn-On Potential gs(th) CSP with Footprint 1.0mm 1.0mm Description Height = 0.62mm for Low Profile This new generation MOSFET is designed to minimize the on-state ESD = 3kV HBM Protection of Gate resistance (R ) and yet maintain superior switching DS(ON) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) performance, making it ideal for high efficiency power management Halogen and Antimony Free. Green Device (Note 3) applications. Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Battery Management Case: U-WLB1010-4 Load Switch Terminal Connections: See Diagram Below Battery Protection Weight: 0.0018 grams (Approximate) U-WLB1010-4 ESD PROTECTED TO 3kV Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2047UCB4-7 U-WLB1010-4 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2047UCB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage V -6 V GSS Steady T = +25C -4.1 A A Continuous Drain Current (Note 5) V = -4.5V I GS D State -3.2 T = +70C A Steady T = +25C -3.6 A Continuous Drain Current (Note 5) V = -2.5V I A GS D State -2.8 T = +70C A Pulsed Drain Current (Note 6) I 16 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 1.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 127 C/W A JA Thermal Resistance, Junction to Case T = +25C (Note 7) R 25.8 C/W C JC Power Dissipation (Note 5) P 1.66 W D 77 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Gate-Source Breakdown Voltage -6.0 V BV V = 0V, I = -250A GSS DS G -1 A Zero Gate Voltage Drain Current T = +25C I V = -16V, V = 0V J DSS DS GS Gate-Source Leakage -100 nA I V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.4 -0.8 -1.2 V V V = V , I = -250A GS(th) DS GS D 40 47 V = -4.5V, I =-1A GS D Static Drain-Source On-Resistance R m DS(ON) 53 60 V = -2.5V, I = -1A GS D Forward Transfer Admittance Y 3.7 S V = -10V, I = -1A fs DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S 3.07 Reverse Recovery Charge Q nC rr V = 10V, I = 1A, DD F 13.14 Reverse Recovery Time t ns di/dt =100A/s rr DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 218 Ciss V = -10V, V = 0V, DS GS Output Capacitance 116 pF C oss f = 1.0MHz Reverse Transfer Capacitance 11 C rss Total Gate Charge 2.3 Q g 0.2 Gate-Source Charge Q V = -4.5V, V = -10V, gs GS DS nC 0.4 Gate-Drain Charge Q I = -1A gd D 0.2 Gate Charge at Vth Q g(th) 7.9 Turn-On Delay Time t D(on) 10.7 Turn-On Rise Time t r V = -10V, V = -2.5V, DS GS ns 48 Turn-Off Delay Time R = 20, I = -1A tD(off) G D Turn-Off Fall Time 38 t f 2 2 Notes: 5. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 DMP2047UCB4 May 2015 Diodes Incorporated www.diodes.com Document number: DS36154 Rev. 6 - 2