DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low R : Case: SC-59 DS(ON) Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D 70 m V = -2.5V GS Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead Free By Design/RoHS Compliant (Note 3) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 4 Gree Device (Note 4) Ordering Information: See page 4 Weight: 0.014 grams (approximate) SC-59 Drain D Gate G S Source TOP VIEW Internal Schematic Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 1) Continuous T = 25C A -4.6 A I D -3.7 T = 70C A Pulsed Drain Current (Note 2) -18 A I DM Body-Diode Continuous Current (Note 1) I 2.0 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 1.25 W D Thermal Resistance, Junction to Ambient (Note 1) Steady-State 100 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc sGree policy can be found on our website at DMP2066LSN Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage BV -20 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current T = 25C I -1 A V = -20V, V = 0V J DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 12V GSS DS GS Gate Threshold Voltage V -0.6 -0.96 -1.2 V V = V , I = -250A GS(th) DS GS D On State Drain Current (Note 5) I -15 A V = -4.5V, V = -5V D (ON) GS DS V = -4.5V, I = -4.6A 29 40 GS D Static Drain-Source On-Resistance (Note 5) R m DS (ON) 55 70 V = -2.5V, I = -3.8A GS D Forward Transconductance (Note 5) 9 S g V = -10V, I = -4.5A FS DS D Diode Forward Voltage (Note 5) V -0.5 -0.72 -1.4 V I = -2.1A, V = 0V SD S GS Maximum Body-Diode Continuous Current (Note 1) 1.7 A I S DYNAMIC PARAMETERS (Note 6) Input Capacitance 820 pF C iss V = -15V, V = 0V DS GS Output Capacitance 200 pF C oss f = 1.0MHz Reverse Transfer Capacitance 160 pF C rss V = 0V, V = 0V DS GS Gate Resistance R 2.5 G f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Q 10.1 G V = -10V, V = -4.5V, DS GS Gate-Source Charge Q 1.5 nC GS I = -4.5A D Gate-Drain Charge Q 4.3 GD Turn-On Delay Time t 4.4 d(on) Rise Time 9.9 t V = -10V, V = -4.5V, r DS GS ns Turn-Off Delay Time 28.0 I = -1A, R = 6.0 t D G d(off) Fall Time 23.4 t f Notes: 5. Test pulse width t = 300s. 6. Guaranteed by design. Not subject to production testing. 30 20 V = 10V V = 4.5V GS V = 5.0V GS DS 16 24 V = 3.0V GS 18 12 8 12 V = 2.5V GS 6 4 T = 150C V = 2.0V A T = 85C GS A T = 125C T = 25C A A V = 1.5V GS T = -55C A 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic 2 of 5 August 2011 DMP2066LSN Diodes Incorporated www.diodes.com Document number: DS31467 Rev. 4 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D