NOT RECOMMENDED FOR NEW DESIGN USE DMP2040USS DMP2066LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 40m V = -4.5V -6.5A GS Fast Switching Speed -20V Low Input/Output Leakage 70m V = -2.5V -5.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: SO-8 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Description and Applications Terminals Connections: See Diagram Backlighting Terminals: Finish - Matte Tin Annealed over Copper Lead Power Management Functions e3 Frame. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074g (Approximate) D SO-8 S D S D G S D G D S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMP2066LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMP2040USS DMP2066LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage V V 12 GSS Drain Current (Note 5) Steady T = +25C -6.5 A I A D State -5.2 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -26 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 5) 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -20V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -0.6 -1.2 V V = V , I = -250A GS(TH) DS GS D 40 V = -4.5V, I = -5.8A GS D Static Drain-Source On-Resistance m R DS(ON) 70 V = -2.5V, I = -3.8A GS D Forward Transconductance g 9 S V = -10V, I = -4.6A fs DS D Diode Forward Voltage V -0.5 -0.72 -1.4 V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 820 pF iss V = -15V, V = 0V DS GS Output Capacitance 200 pF C oss f = 1.0MHz Reverse Transfer Capacitance 160 pF C rss V = 0V, V = 0V, DS GS Gate Resistance R 10.4 g f = 1.0MHz Total Gate Charge Q 14.4 g V = -10V, V = -4.5V DS GS Gate-Source Charge Q 2.6 nC gs I = -4.5A D Gate-Drain Charge Q 2.7 gd Turn-On Delay Time t 13.7 D(ON) Turn-On Rise Time 14.0 tR V = -10V, V = -4.5V, DD GS ns Turn-Off Delay Time 79.1 R = 6, R = 10, I = -1A t G L D D(OFF) Turn-Off Fall Time 35.5 t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 DMP2066LSS September 2019 Diodes Incorporated www.diodes.com Document number: DS31522 Rev. 5 - 3 NEW PRODUCT