DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications I D 2 V R Package (BR)DSS DS(ON) PCB footprint of 4mm T = +25C A Low Gate Threshold Voltage -6.2A 36m V = -4.5V GS Low On-Resistance U-DFN2020-6 -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 56m V = -2.5V -5.0A GS Type E Halogen and Antimony Free. Green Device (Note 3) 75m V = -1.8V -4.2A GS Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: U-DFN2020-6 Type E Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram General Purpose Interfacing Switch Weight: 0.0065 grams (approximate) Power Management Functions Analog Switch U-DFN2020-6 Type E 6 D D 1 Pin1 5 D D 2 4SS G3 Bottom View Bottom View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2066UFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2066UFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C -6.2 A A I D State -4.9 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -7.5 A t<5s I A D -5.9 T = +70C A T = +25C Steady A -4.2 A I D State -3.4 T = +70C A Continuous Drain Current (Note 5) V = -1.8V GS T = +25C -5.2 A t<5s I A D -4.1 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -25 A DM Maximum Continuous Body Diode Forward Current (Note 5) I 2.5 A S Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 0.66 W D Steady state 189 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 123 C/W Total Power Dissipation (Note 5) P 2.03 W D Steady state 61 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<5s 40 C/W Thermal Resistance, Junction to Case (Note 5) 9.3 C/W R Jc Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12.0V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.4 -1.1 V V = V , I = -250A GS(th) DS GS D 25 36 V = -4.5V, I = -4.6A GS D Static Drain-Source On-Resistance 33 56 R m V = -2.5V, I = -3.8A DS (ON) GS D 50 75 V = -1.8V, I = -2.0A GS D Forward Transfer Admittance 9 S Y V = -10V, I = -4.5A fs DS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1537 pF iss V = -10V, V = 0V DS GS Output Capacitance C 146 pF oss f = 1.0MHz Reverse Transfer Capacitance C 127 pF rss Gate Resistance R 10.4 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge Q 14.4 g V = -10V, V = -4.5V DS GS Gate-Source Charge Q 2.6 nC gs I = -4.5A D Gate-Drain Charge 2.7 Q gd Turn-On Delay Time 13.7 t D(on) Turn-On Rise Time 14.0 t V = -10V, V = -4.5V, R = 6 , r DD GS G ns Turn-Off Delay Time 79.1 R = 10 , I = -1A t L D D(off) Turn-Off Fall Time t 35.5 f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 July 2012 DMP2066UFDE Diodes Incorporated www.diodes.com Document number: DS35496 Rev. 5 - 2