DMP2070UCB6 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary(Typ. V = -4.5V, T = +25C) Features and Benefits GS A LD-MOS Technology with the Lowest Figure of Merit: V R Q Q I DSS DS(on) g gd D R = 55m to Minimize On-State Losses DS(on) -20V 55m 2.9nC 0.5nC -3.5A Q = 2.9nC for Ultra-Fast Switching g V = -0.6V typ. for a Low Turn-On Potential gs(th) CSP with Footprint 1.5mm 1.0mm Description and Applications Height = 0.62mm for Low Profile This new generation MOSFET is designed to minimize the on-state Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) resistance (R ) and yet maintain superior switching performance, DS(on) Halogen and Antimony Free. Green Device (Note 3) making it ideal for high efficiency power management applications. Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Battery Management Case: U-WLB1510-6 Load Switch Terminal Connections: See Diagram Below Battery Protection Weight: 0.0018 grams (Approximate) U-WLB1510-6 D D S S S G Top View Ordering Information (Note 4) Part Number Case Packaging DMP2070UCB6-7 U-WLB1510-6 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2070UCB6 Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V VDSS Gate-Source Voltage 8 V V GSS Steady T = +25C -2.5 A A Continuous Drain Current (Note 4) V = -4.5V I GS D State -2.0 T = +70C A Steady T = +25C -3.5 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -2.8 T = +70C A Pulsed Drain Current (Note 6) -12 A I DM Maximum Continuous Body Diode Forward Current (Note 5) -1.8 A I S Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 4) 0.92 W P D Total Power Dissipation (Note 5) 1.47 W P D Thermal Resistance, Junction to Ambient (Note 4) R 136 C/W JA Thermal Resistance, Junction to Ambient (Note 5) 84 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - -1 A V = -16V, V = 0V C DSS DS GS Gate-Source Leakage I - - 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.4 -0.6 -1.0 V V = V , I = -250A GS(th) DS GS D 55 70 V = -4.5V, I = - 1A GS D 70 90 V = -2.5V, I = -1A GS D Static Drain-Source On-Resistance R - m DS (ON) 90 110 V = -1.8V, I = -1A GS D 110 150 V = -1.5V, I = -1A GS D Forward Transfer Admittance - 12 - S Y V = -10V, I = -1A fs DS D Diode Forward Voltage (Note 5) V - -0.7 -1 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 210 - pF iss VDS = -10V, VGS = 0V, Output Capacitance C - 92 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 38 - pF rss Series Gate Resistance R 5.3 - V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (4.5V) - 2.9 - nC Q g V = -4.5V, V = -10V, GS DS Gate-Source Charge - 0.3 - nC Q gs I = -1A , D Gate-Drain Charge - 0.5 - nC Q gd Turn-On Delay Time - 7.3 - ns t D(on) Turn-On Rise Time t - 14.0 - ns V = -10V, V = -4.5V, r DD GS Turn-Off Delay Time t - 42.6 - ns I = -1A, R = 20, D(off) DS G Turn-Off Fall Time t - 32 - ns f Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 2 5. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6 300ms pulse, pulse duty cycle 2%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMP2070UCB6 May 2015 Diodes Incorporated www.diodes.com Document number: DS35553 Rev. 3 - 2 NEW PRODUCT