DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Dual P-Channel MOSFET D V R (BR)DSS DS(ON) T = +25C A Low On-Resistance 5.5 V = -4.5V -200mA GS -20V 5.5 -4.5V 7.5 V = -2.5V -170mA GS 7.5 -2.5V 11.5 -1.8V 17.5 -1.5V Very Low Gate Threshold Voltage V <1.15V GS(TH) Low Input Capacitance Description Fast Switching Speed This new generation MOSFET has been designed to minimize the on- ESD Protected Gate state resistance (R ) and yet maintain superior switching DS(on) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) performance, making it ideal for high efficiency power management Halogen and Antimony Free. Green Device (Note 3) applications. Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT963 Applications Case Material: Molded Plastic, Green Molding Compound. UL DC-DC Converters Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) SOT963 D G S 2 1 1 ESD protected S G D 2 2 1 Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP210DUDJ-7 SOT963 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP210DUDJ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 8 V V GSS T = +25C -200 A Continuous Drain Current (Note 6) V = -4.5V I mA GS D -150 T = +70C A T = +25C A -170 mA Continuous Drain Current (Note 6) V = -2.5V I GS D -130 T = +70C A Pulsed Drain Current -600 mA T = 10 s I P DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 330 mW D Thermal Resistance, Junction to Ambient (Note 6) R 377.16 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D -100 nA V = -16V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS -50 nA V = -5.0V, V = 0V DS GS nA V = 5.0V, V = 0V 100 GS DS Gate-Source Leakage I GSS 1 A V = 8.0V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.45 -1.15 V V V = V , I = -250A GS(th) DS GS D 5.5 V = -4.5V, I = -100mA GS D 7.5 V = -2.5V, I = -50mA GS D Static Drain-Source On-Resistance R 11.5 V = -1.8V, I = -20mA DS(ON) GS D 17.5 V = -1.5V, I = -10mA GS D 20 V = -1.2V, I = -1mA GS D Forward Transfer Admittance Y 150 200 mS V = -10V, I = -0.2A fs DS D Diode Forward Voltage (Note 7) V -0.5 -1.2 V V = 0V, I = -115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 13.72 27.44 pF iss V = -15V, V = 0V DS GS Output Capacitance 4.01 8.02 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.34 4.68 pF C rss SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time 7.7 t d(on) Rise Time 19.3 t V = -4.5V, V = -15V r GS DD ns Turn-Off Delay Time I = -180mA, R = 2.0 t 25.9 d(off) D G Fall Time t 31.5 f Notes: 6. Device mounted on 1x1 FR-4 substrate PC board, with minimum recommended pad layout, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 November 2013 DMP210DUDJ Diodes Incorporated www.diodes.com Document number: DS31494 Rev. 9 - 2