DMP2123LQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low R Case: SOT23 DS(ON) - 72m V = -4.5V Case Material - Molded Plastic, Green Molding Compound. GS - 108m V = -2.7V UL Flammability Rating 94V-0 GS - 123m V = -2.5V Moisture Sensitivity: Level 1 per J-STD-020 GS Low Input/Output Leakage Terminals: Finish - Matte Tin Annealed over Copper Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Leadframe. Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Terminal Connections: See Diagram Below Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (Approximate) PPAP Capable (Note 4) SOT23 D ra in D G ate G S S o urce Top View Internal Schematic Top View Ordering Information (Note 5) Part Number Case Packaging DMP2123LQ-7 SOT23 3,000/Tape & Reel DMP2123LQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2123LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 6) Continuous T = +25C -3.0 A I A D -2.4 T = +70C A Pulsed Drain Current (Note 7) -15 A I DM Body-Diode Continuous Current (Note 6) -2.0 A I S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady-State 90 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage BV -20 V I = -250A, V = 0V DSS D GS -1 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V J DSS DS GS Gate-Body Leakage Current 100 nA I V = 0V, V = 12V GSS DS GS Gate Threshold Voltage V -0.6 -1.25 V V = V , I = -250A GS(TH) DS GS D On State Drain Current (Note 8) I -15 A V = -4.5V, V = -5V D(ON) GS DS 51 72 V = -4.5V, I = -3.5A GS D Static Drain-Source On-Resistance (Note 8) R 87 108 m V = -2.7V, I = -3.0A DS(ON) GS D 99 123 V = -2.5V, I = -2.6A GS D Forward Transconductance (Note 8) 7.3 S g V = -10V, I = -3.0A FS DS D Diode Forward Voltage (Note 6) V -0.79 -1.26 V I = -1.7A, V = 0V SD S GS Maximum Body-Diode Continuous Current (Note 6) I -1.7 A S DYNAMIC PARAMETERS (Note 9) Total Gate Charge Q 7.3 nC V = -4.5V, V = -10V, I = -3.0A g GS DS D Gate-Source Charge 2.0 nC Q V = -4.5V, V = -10V, I = -3.0A gs GS DS D Gate-Drain Charge 1.9 nC Q V = -4.5V, V = -10V, I = -3.0A gd GS DS D Turn-On Delay Time t 12 ns D(ON) Turn-On Rise Time 20 ns t V = -10V, V = -4.5V, R DS GS Turn-Off Delay Time 38 ns R = 10, R = 6 t L G D(OFF) Turn-Off Fall Time t 41 ns F Input Capacitance 443 pF C iss V = -16V, V = 0V DS GS Output Capacitance 128 pF Coss f = 1.0MHz Reverse Transfer Capacitance C 101 pF rss Notes: 6. Device mounted on 1 x 1 , FR-4 PC board with 2 oz. copper and test pulse width t 10s. 7. Repetitive Rating, pulse width limited by junction temperature. 8. Test pulse width t = 300s. 9. Guaranteed by design. Not subject to product testing. 2 of 5 DMP2123LQ October 2015 Diodes Incorporated www.diodes.com Document number: DS38317 Rev. 2 - 2 NEW PRODUCT