DMP2130LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low R : Case: SOT-26 DS(ON) Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D 110 m V = -2.7V GS Terminals: Finish - Matte Tin Solderable per MIL-STD-202, 130 m V = -2.5V GS Method 208 Low Input/Output Leakage Terminal Connections: See Diagram Lead Free By Design/RoHS Compliant (Note 3) Marking Information: See Page 2 Qualified to AEC-Q101 Standards for High Reliability Ordering Information: See page 2 Gree Device (Note 4) Weight: 0.008 grams (approximate) SOT-26 D D S D D G TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 1) Continuous T = 25C -3.4 A A I D -2.7 T = 70C A Pulsed Drain Current (Note 2) I -12 A DM Body-Diode Continuous Current (Note 1) I 2.0 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 1.25 W D Thermal Resistance, Junction to Ambient (Note 1) Steady-State 100 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc sGree policy can be found on our website at DMP2130LDM Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage -20 V BV I = -250A, V = 0V DSS D GS -1 A Zero Gate Voltage Drain Current T = 25C I V = -20V, V = 0V J DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 12V GSS DS GS Gate Threshold Voltage V -0.6 -1.25 V V = V , I = -250A GS(th) DS GS D On State Drain Current (Note 5) I -15 A V = -4.5V, V = -5V D (ON) GS DS V = -4.5V, I = -4.5A 51 80 GS D Static Drain-Source On-Resistance (Note 5) R 82 110 m V = -2.7V, I = -3.8A DS (ON) GS D 94 130 V = -2.5V, I = -3.7A GS D Forward Transconductance (Note 5) g 6.3 S V = -10V, I = -4.5A FS DS D Diode Forward Voltage (Note 5) V 0.79 -1.26 V I = -1.7A, V = 0V SD S GS Maximum Body-Diode Continuous Current (Note 1) I 1.7 A S DYNAMIC PARAMETERS (Note 6) Total Gate Charge Q 7.3 nC V = -4.5V, V = -10V, I = 4.5A g GS DS D Gate-Source Charge Q 2.0 nC V = -4.5V, V = -10V, I = 4.5A gs GS DS D Gate-Drain Charge Q 1.9 nC V = -4.5V, V = -10V, I = 4.5A gd GS DS D Turn-On Delay Time 12 ns t D(on) Turn-On Rise Time 20 ns t V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time t 38 ns R = 10, R = 6 D(off) L G Turn-Off Fall Time t 41 ns f Input Capacitance C 443 pF iss V = -16V, V = 0V DS GS Output Capacitance C 125 pF oss f = 1.0MHz Reverse Transfer Capacitance 98 pF C rss Notes: 5. Test pulse width t = 300s. 6. Guaranteed by design. Not subject to production testing. V = -5V DS Pulsed -V , DRAIN-SOURCE VOLTAGE (V) -V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 4 May 2008 DMP2130LDM Diodes Incorporated www.diodes.com Document number: DS31118 Rev. 6 - 2 NEW PRODUCT