DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Very Low Gate Threshold Voltage V 1V GS(th) T = +25C A Low Input Capacitance -3.3A 75m V = -4.5V GS Fast Switching Speed -20V Low Input/Output Leakage -2.4A 140m V = -1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability Description and Applications Mechanical Data Case: SOT23 This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Charging Terminals Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin annealed over Copper leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Portable Power Adaptors Weight: 0.008 grams (approximate) Drain SOT23 D Gate Source G S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2160U-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2160U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS T = +25 C -3.3 A Continuous Drain Current (Note 5) V = -4.5V I A GS D -2.6 T = +70 C A Pulsed Drain Current -13 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) 90 C/W R JA Thermal Resistance, Junction to Case (Note 5) R 22 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25 C I -1.0 A V = -16V, V = 0V J DSS DS GS 100 V = 8V, V = 0V GS DS Gate-Source Leakage I nA GSS 800 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -0.4 -0.6 -0.9 V V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -1.5A 60 75 GS D Static Drain-Source On-Resistance 73 96 m R V = -2.5V, I = -1.2A DS (ON) GS D 92 140 V = -1.8V, I = -1.2A GS D Forward Transconductance g 7 S V = -10V, I = -1.5A FS DS D Diode Forward Voltage (Note 5) V -1.0 V V = 0V, I = -1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 627 pF iss V = -10V, V = 0V DS GS Output Capacitance C 64 pF oss f = 1.0MHz Reverse Transfer Capacitance C 53 pF rss Gate Resistance R 44.9 V = 0V, V = 0V, f = 1.0MHz G GS DS Total Gate Charge 6.5 nC Q g Gate-Source Charge 0.9 nC Q V = -4.5V, V = -10V, I = -3A gs GS DS D Gate-Drain Charge 1.5 nC Q gd Turn-On Delay Time t 12.5 ns D(on) Turn-On Rise Time t 10.3 ns V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time t 46.5 ns R = 10 , R = 1.0, I = -1A D(off) L G D Turn-Off Fall Time t 22.2 ns f 2 Notes: 5. Device mounted on 1in FR-4 PCB with 2 oz. Copper. t 10 sec. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 5 February 2014 DMP2160U Diodes Incorporated www.diodes.com Document number: DS31586 Rev. 8 - 2