X-On Electronics has gained recognition as a prominent supplier of DMP2160UFDBQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP2160UFDBQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP2160UFDBQ-7 Diodes Incorporated

DMP2160UFDBQ-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMP2160UFDBQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS
Datasheet: DMP2160UFDBQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.621 ea
Line Total: USD 0.62 
Availability - 15454
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1212
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 5
Multiples : 5
5 : USD 0.3309
50 : USD 0.267
150 : USD 0.2395
500 : USD 0.2053
3000 : USD 0.1902
6000 : USD 0.181

15454
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.621
10 : USD 0.4738
100 : USD 0.3266
500 : USD 0.2576
1000 : USD 0.2335
3000 : USD 0.1806
45000 : USD 0.176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP2160UFDBQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP2160UFDBQ-7 and other electronic components in the MOSFETs category and beyond.

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DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX V R (BR)DSS DS(ON) max T = +25C A Low Gate Threshold Voltage, -0.9V Max -3.8A 70m V = -4.5V Fast Switching Speed GS -20V 85m V = -2.5V -3.3A GS Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance PPAP Capable (Note 4) (R ) and yet maintain superior switching performance, making it DS(on) ideal for high efficiency power management applications. Mechanical Data Applications Case: U-DFN2020-6 Type B Load Switch Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Portable Power Adaptors Terminal Connections: See Diagram Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) U-DFN2020-6 D G S Type B D2 D1 3 2 1 S2 G2 D2 G2 G1 D1 D1 4 5 6 D2 S G D S1 S2 G1 S1 Top View Q2 P-CHANNEL Q1 P-CHANNEL Pin1 Internal Schematic Bottom View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP2160UFDBQ-7 U-DFN2020-6 Type B 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2160UFDBQ Marking Information P2 = Marking Code YM = Date Marking P2 Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1 Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 Code V W X Y Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 6) I -3.8 A D Pulsed Drain Current (Note 7) -13 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 1.4 W D Thermal Resistance, Junction to Ambient 89 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -20V, V = 0V DSS DS GS 100 V = 8V, V = 0V GS DS Gate-Source Leakage nA I GSS 800 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.45 -0.9 V V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -2.8A 70 GS D 54 85 Static Drain-Source On-Resistance R 68 m V = -2.5V, I = -2.0A DS (ON) GS D 86 V = -1.8V, I = -1.0A GS D Forward Transfer Admittance 8 S Y V = -5V, I = -2.8A fs DS D Diode Forward Voltage (Note 8) 0.7 -1.2 V V V = 0V, I = -1.6A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 536 pF C iss V = -10V, V = 0V DS GS Output Capacitance 68 pF C oss f = 1.0MHz Reverse Transfer Capacitance 59 pF C rss 8.72 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 6.5 Total Gate Charge nC Q g V = -4.5V, V = -10V, GS DD Gate-Source Charge 0.8 nC Q gs I = -1.5A D 1.4 Gate-Drain Charge Q nC gd 11.51 Turn-On Delay Time t ns D(on) V = -4.5V, V = -10V, Turn-On Rise Time 12.09 ns GEN DD t r R = 10, R = 6 L G Turn-Off Delay Time 55.34 ns t D(off) Turn-Off Fall Time 27.54 ns t f Notes: 6. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMP2160UFDBQ January 2015 Diodes Incorporated www.diodes.com Document Number: DS37546 Rev. 1 - 2 NEW PRODUCT YM

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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