DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX V R (BR)DSS DS(ON) max T = +25C A Low Gate Threshold Voltage, -0.9V Max -3.8A 70m V = -4.5V Fast Switching Speed GS -20V 85m V = -2.5V -3.3A GS Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance PPAP Capable (Note 4) (R ) and yet maintain superior switching performance, making it DS(on) ideal for high efficiency power management applications. Mechanical Data Applications Case: U-DFN2020-6 Type B Load Switch Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Portable Power Adaptors Terminal Connections: See Diagram Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) U-DFN2020-6 D G S Type B D2 D1 3 2 1 S2 G2 D2 G2 G1 D1 D1 4 5 6 D2 S G D S1 S2 G1 S1 Top View Q2 P-CHANNEL Q1 P-CHANNEL Pin1 Internal Schematic Bottom View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP2160UFDBQ-7 U-DFN2020-6 Type B 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2160UFDBQ Marking Information P2 = Marking Code YM = Date Marking P2 Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1 Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 Code V W X Y Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 6) I -3.8 A D Pulsed Drain Current (Note 7) -13 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 1.4 W D Thermal Resistance, Junction to Ambient 89 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -20V, V = 0V DSS DS GS 100 V = 8V, V = 0V GS DS Gate-Source Leakage nA I GSS 800 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.45 -0.9 V V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -2.8A 70 GS D 54 85 Static Drain-Source On-Resistance R 68 m V = -2.5V, I = -2.0A DS (ON) GS D 86 V = -1.8V, I = -1.0A GS D Forward Transfer Admittance 8 S Y V = -5V, I = -2.8A fs DS D Diode Forward Voltage (Note 8) 0.7 -1.2 V V V = 0V, I = -1.6A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 536 pF C iss V = -10V, V = 0V DS GS Output Capacitance 68 pF C oss f = 1.0MHz Reverse Transfer Capacitance 59 pF C rss 8.72 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 6.5 Total Gate Charge nC Q g V = -4.5V, V = -10V, GS DD Gate-Source Charge 0.8 nC Q gs I = -1.5A D 1.4 Gate-Drain Charge Q nC gd 11.51 Turn-On Delay Time t ns D(on) V = -4.5V, V = -10V, Turn-On Rise Time 12.09 ns GEN DD t r R = 10, R = 6 L G Turn-Off Delay Time 55.34 ns t D(off) Turn-Off Fall Time 27.54 ns t f Notes: 6. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMP2160UFDBQ January 2015 Diodes Incorporated www.diodes.com Document Number: DS37546 Rev. 1 - 2 NEW PRODUCT YM