A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 2 Footprint of just 3mm less than half the size of SOT23 I Max D 0.8mm profile ideal for low profile applications V R Max T = 25C (BR)DSS DS(on) A Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate 3KV -0.59A 495m V = -4.5V GS Totally Lead-Free & Fully RoHS compliant (Note 1) -20V Halogen and Antimony Free. Green Device (Note 2) 690m V = -2.5V -0.50A GS Qualified to AEC-Q101 Standards for High Reliability 960m V = -1.8V -0.42A GS Mechanical Data Description and Applications Case: SOT523 Case Material: Molded Plastic, Green Molding Compound. This MOSFET has been designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(on) ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Solderable per MIL-STD-202, Portable electronics Method 208 Weight: 0.002 grams (approximate) Drain SOT523 D Gate Gate S G Protection Source Diode Bottom View Top View Equivalent Circuit ESD PROTECTED TO 3kV Internal Schematic Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMP21D0UT-7 PBC 7 8 3,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc sGree policy can be found on our website at A Product Line of Diodes Incorporated DMP21D0UT Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = 25C (Note 4) -0.59 A Steady Continuous Drain Current T = 85C (Note 4) I -0.42 A A D State -0.65 T = 25C (Note 5) A Pulsed Drain Current (Note 6) I -5.0 A DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) 0.24 W P D Power Dissipation (Note 5) 0.33 W P D Thermal Resistance, Junction to Ambient (Note 4) 525 C/W R JA Thermal Resistance, Junction to Ambient (Note 5) R 383 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm FR-4 PCB with high coverage of 2oz copper 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 10 9 Single Pulse R = 380C/W JA R (t) = r(t) * R 8 JA JA T - T = P * R (t) JA JA 7 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (SEC) 1 Fig. 1 Single Pulse Maximum Power Dissipation 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 R (t) = r(t) * R JA JA R = 380C/W JA D = 0.02 P(pk) 0.01 t D = 0.01 1 t 2 D = 0.005 T - T = P * R (t) JA JA Duty Cycle, D = t /t 12 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 2 Transient Thermal Response 2 of 7 March 2012 DMP21D0UT Diodes Incorporated www.diodes.com Datasheet Number: DS35297 Rev. 2 - 2 r(t), TRANSIENT THERMAL RESISTANCE P(pk), PEAK TRANSIENT POWER (W)