DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Very Low Gate Threshold Voltage V , 1.0V max V R GS(TH) (BR)DSS DS(on) max T = 25C A Low Input Capacitance Fast Switching Speed 1.0 V = -4.5V -700mA GS Ultra-Small Surfaced Mount Package 1.5 V = -2.5V -600mA GS Ultra-low package profile, 0.4mm maximum package height -20V ESD Protected Gate -500mA 2.0 V = -1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -380mA Halogen and Antimony Free. Green Device (Note 3) 3.0 V = -1.5V GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: X2-DFN1006-3 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. UL performance, making it ideal for high efficiency power management Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish NiPdAu over Copper leadframe. Solderable Power management functions per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain X2-DFN1006-3 Gate S D Gate Protection Source G Diode Bottom View Top View Equivalent Circuit ESD PROTECTED Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP21D5UFB4-7B X2-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP21D5UFB4 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = 25C Steady A -700 mA I D State -600 T = 70C A Continuous Drain Current (Note 6) V = -4.5V GS T = 25C -850 A t<10s I mA D -670 T = 70C A Steady T = 25C -500 A I mA D State -400 T = 70C A Continuous Drain Current (Note 6) V = -1.8V GS T = 25C -600 A t<10s I mA D -550 T = 70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I -2 A DM Maximum Body Diode continuous Current I -800 mA S Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.46 W P D Steady state 279 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 210 C/W Total Power Dissipation (Note 6) 0.95 W P D Steady state 134 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 100 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 - - V BV V = 0V, I = -1mA DSS GS D Zero Gate Voltage Drain Current T = 25C I - - -100 nA V = -20V, V = 0V J DSS DS GS - - 1.0 V = 5V, V = 0V GS DS Gate-Source Leakage I A GSS - - 5.0 V = 8V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.5 - -1.0 V V = V , I = -250A GS(th) DS GS D - 0.67 0.97 V = -5V, I = -100mA GS D 0.7 1.0 V = -4.5V, I = -100mA GS D - 0.9 1.5 V = -2.5V, I = -80mA GS D Static Drain-Source On-Resistance R DS (ON) - 1.2 2.0 V = -1.8V, I = -40mA GS D - 1.5 3.0 V = -1.5V, I = -30mA GS D - 5 - V = -1.2V, I = -1mA GS D Forward Transfer Admittance - 0.7 - S Y V = -3V, I = -100mA fs DS D Diode Forward Voltage V - -0.75 -1.2 V V = 0V, I = -330mA, SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 46.1 - Input Capacitance C iss V = 10V, V = 0V, DS GS - 7.2 - Output Capacitance C pF oss f = 1.0MHz - 4.9 - Reverse Transfer Capacitance C rss - 14.3 - Gate Resistance R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge V = -4.5V Q - 0.5 - GS g Gate-Source Charge - 0.09 - nC Q V = -10V, I = -250mA gs DS D Gate-Drain Charge - 0.09 - Q gd Turn-On Delay Time - 8.5 - t D(on) V = -3V, V = -2.5V, DD GS Turn-On Rise Time - 4.3 - t r ns R = 300 , R = 25 , L G 20.2 Turn-Off Delay Time t - - D(off) I = -100mA D 19.2 Turn-Off Fall Time t - - f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 May 2012 DMP21D5UFB4 Diodes Incorporated www.diodes.com Document number: DS35284 Rev. 5 - 2 ADVANCE INFORMATION