DMP21D6UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 2 Footprint of just 0.6mm 13 Times Smaller Than SOT23 I D BV R DSS DS(ON) 0.4mm Profile Ideal for Low Profile Applications TA = +25C Low Gate Threshold Voltage -0.58A 1.0 V = -4.5V GS Fast Switching Speed ESD Protected Gate -20V -0.48A 1.5 V = -2.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -0.41A 2.0 V = -1.8V GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: X2-DFN1006-3 Case Material: Molded Plastic, Green Molding Compound. This MOSFET is designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ), yet maintain superior switching performance, making it DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Terminals: Finish NiPdAu over Copper Leadframe. Solderable e4 per MIL-STD-202, Method 208 Portable Electronics Weight: 0.001 grams (Approximate) D X2-DFN1006-3 G S D G Gate Protection S Diode Top View Bottom View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Tape Pitch (mm) Quantity per Reel DMP21D6UFB4-7B 95 7 8 2 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP21D6UFB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage 8 V V GSS T = +25C (Note 5) -0.58 A Steady -0.47 A Continuous Drain Current V = -4.5V T = +70C (Note 5) I GS A D State -0.81 T = +25C (Note 6) A Maximum Body Diode Forward Current (Note 6) I -0.8 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -5.0 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 0.51 W P D Thermal Resistance, Junction to Ambient (Note 5) 240 C/W R JA Power Dissipation (Note 6) 0.98 W P D Thermal Resistance, Junction to Ambient (Note 6) R 128 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.5 -1.0 V V = V , I = -250A GS(TH) DS GS D 0.67 1.0 VGS = -4.5V, ID = -100mA Static Drain-Source On-Resistance 0.85 1.5 R V = -2.5V, I = -80mA DS(ON) GS D 1.0 2.0 V = -1.8V, I = -40mA GS D Diode Forward Voltage -1.0 -1.2 V V V = 0V, I = -300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 46.1 pF iss V = -10V, V = 0V, DS GS Output Capacitance C 7.2 pF oss f = 1.0MHz Reverse Transfer Capacitance C 4.9 pF rss 350 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (V = -4.5V) Q 0.5 nC GS G Total Gate Charge (V = -8V) Q 0.8 nC GS G V = -10V, I = -250mA DS D Gate-Source Charge 0.1 nC QGS Gate-Drain Charge 0.1 nC Q GD Turn-On Delay Time 8.5 ns t D(ON) V = -3V, V = -2.5V, DD GS Turn-On Rise Time 4.3 ns t R R = 300, R = 25, L G Turn-Off Delay Time 20.2 ns t D(OFF) I = -100mA D Turn-Off Fall Time 19.2 ns t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 June 2018 DMP21D6UFB4 www.diodes.com Diodes Incorporated Datasheet number: DS40640 Rev. 2 - 2