DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Low R Minimizes Conduction Losses V R max I max DS(ON) (BR)DSS DS(on) D Low Input Capacitance 260m V = -4.5V GS Fast Switching Speed -20V -0.9 A 500m V = -2.5V GS Low Input/Output Leakage 1000m V = -1.8V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Mechanical Data ideal for high-efficiency power management applications. Case: SOT363 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Disconnect Switch Terminals Connections: See Diagram Load Switch for Power Management Functions Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D1 D2 D G S 2 1 1 SOT363 G1 G2 Gate Protection S G D Gate Protection 2 2 1 S1 S2 Diode Diode ESD PROTECTED Top View Top View Q2 P-CHANNEAL Q1 P-CHANNEAL Pin out Ordering Information (Note 4) Part Number Case Packaging DMP2200UDW-7 SOT363 3,000/Tape & Reel DMP2200UDW-13 SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2200UDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 8 V V GSS T = +25C -0.9 A Continuous Drain Current (Note 6) I A D -0.7 T = +85C A Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.45 W P D Total Power Dissipation (Note 6) 0.6 W Steady Thermal Resistance, Junction to Ambient (Note 5) 275 State R JA Steady C/W Thermal Resistance, Junction to Ambient (Note 6) 208 State Thermal Resistance, Junction to Case 72 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Body Leakage 10 A IGSS VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -1.2 V V V = V , I = -250A GS(th) DS GS D 180 260 V = -4.5V, I = -0.88A GS D Static Drain-Source On-Resistance 240 500 m R V = -2.5V, I = -0.71A DS (ON) GS D 320 1,000 V = -1.8V, I = -0.20A GS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -0.48A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 184 pF iss V = -10V, V = 0V DS GS Output Capacitance 26.4 pF C oss f = 1.0MHz Reverse Transfer Capacitance 18.5 pF C rss Gate Resistance 221 V = V = 0V,f = 1.0MHz R DS GS g Total Gate Charge 2.1 nC Q g V = -4.5V, V = -10V, GS DS Gate-Source Charge 0.4 nC Q gs I = -1.7A D Gate-Drain Charge Q 0.5 nC gd Turn-On Delay Time t 9.8 ns D(ON) Turn-Off Delay Time t 24.4 ns D(OFF) V = -10V, I = -1.5A, DD D Turn-On Rise Time t r 88 ns V = -4.5V, R = 1 GS GEN Turn-Off Fall Time t f 45 ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 February 2015 DMP2200UDW Diodes Incorporated www.diodes.com Document number: DS37689 Rev. 1 - 2 ADVANCE INFORMATION