DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance V R Package (BR)DSS DS(ON) T = +25C A Low Input Capacitance -2.6A 110m V = -4.5V GS -20V SOT23 Fast Switching Speed -2.0A 225m V = -2.5V GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- PPAP Capable (Note 4) state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT23 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 General Purpose Interfacing Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate G S Source Top View Top View Equivalent Circuit Ordering Information(Note 4& 5) Part Number Qualification Case Packaging DMP2225L-7 Standard SOT-23 3000/Tape & Reel DMP2225LQ-7 Automotive SOT-23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2225L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Stead T = +25C -2.6 A Continuous Drain Current (Note 6) I A D State T = +70C -2 A Pulsed Drain Current (Note 7) I 8 A DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.08 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 115 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -800 nA V = -20V, V = 0V DSS DS GS -6 V -5V, V = -4.5V DS GS On-State Drain Current I A D(ON) -3 V -5V, V = -2.5V DS GS Gate-Source Leakage 80 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.45 -1.25 V V V = V , I = -250A GS(th) DS GS D 80 110 V = -4.5V, I = -2.6A GS D Static Drain-Source On-Resistance R m DS (ON) 165 225 V = -2.5V, I = -2.0A GS D Forward Transfer Admittance Y 4 S V = -5V, I = -2.6A fs DS D Diode Forward Voltage (Note 7) V -1.26 V V = 0V, I = -2.6A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 250 pF iss V = -10V, V = 0V DS GS Output Capacitance C 88 pF oss f = 1.0MHz Reverse Transfer Capacitance C 58 pF rss Gate Resistance R 12 16 V = 0V, V = 0V, f = 1MHz g GS DS Total Gate Charge Q 4.3 5.3 g V = -4.5V, V = -10V, GS DS Gate-Source Charge 0.9 nC Q gs I = -2.7A D Gate-Drain Charge 2.1 Q gd Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 October 2013 DMP2225L Diodes Incorporated www.diodes.com Document number: DS31461 Rev. 6 - 2