DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) T = 25C A Very Low Gate Threshold Voltage V 1V GS(th) Low Input Capacitance 150m V = -4.5V GS -1.5A Fast Switching Speed 200m V = -2.5V GS -1A Low Input/Output Leakage -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 240m V = -1.8V -0.9A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(on) Case: SOT-323 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D ra in SOT-323 D G a te G S S o u rc e Top View Internal Schematic Top View Ordering Information (Note 5) Part Number Case Packaging DMP2240UWQ-7 SOT-323 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2240UWQ Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS T = +25C -1.5 A Drain Current (Note 6) I A D -1.0 T = +70C A Pulsed Drain Current -5 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) 250 mW P D Thermal Resistance, Junction to Ambient 500 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C -1.0 J I A V = -20V, V = 0V DSS DS GS -5.0 T = +125C J Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.45 -1.0 V V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -2.0A 92 150 GS D Static Drain-Source On-Resistance 134 200 R m V = -2.5V, I = -1.5A DS (ON) GS D 180 240 V = -1.8V, I = -0.5A GS D Forward Transconductance g 3.1 S V = -10V, I = -810mA FS DS D Diode Forward Voltage (Note 7) V -0.9 V V = 0V, I = -0.5A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 320 pF iss V = -16V, V = 0V DS GS Output Capacitance C 80 pF oss f = 1.0MHz Reverse Transfer Capacitance C 60 pF rss Turn-On Delay Time 12.5 ns t D(on) Turn-On Rise Time 10.3 ns t V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time 46.5 ns R = 10, R = 1.0 t L G D(off) Turn-Off Fall Time 22.2 ns t f Notes: 6. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. V = -3.0V GS V = -10V V = -2.0V DS GS V = -1.8V GS V = -1.6V GS T = 125C V = -1.4V A GS T = 25C A V = -1.0V T = -55C GS A V = -1.2V GS 2 of 5 DMP2240UWQ November 2014 Diodes Incorporated www.diodes.com Document number: DS37585 Rev. 1 - 2 NEW PRODUCT