DMP22D4UFO 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low Package Profile D BV R Max DSS DS(ON) T = +25C 0.6mm x 0.4mm Package Footprint A Low On-Resistance 1.9 V = -4.5V -530mA GS Very Low Gate Threshold Voltage: -1.0V Max 2.4 V = -2.5V -471mA GS -20V ESD Protected Gate 3.4 V = -1.8V -397mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 5.0 V = -1.5V -328mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description Case: X2-DFN0604-3 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications e3 Solderable per MIL-STD-202, Method 208 General Purpose Interfacing Switch Weight: 0.001 grams (Approximate) Power Management Functions Analog Switch D X2-DFN0604-3 S G D G Gate Protection ESD PROTECTED S Diode Top View Equivalent Circuit Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP22D4UFO-7B X2-DFN0604-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP22D4UFO Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -530 A mA Continuous Drain Current (Note 5) V = -4.5V I GS D State -383 T = +85C A Pulsed Drain Current (Note 6) -0.6 mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) Steady State P 820 mW D Thermal Resistance, Junction to Ambient (Note 5) Steady State 155 C/W R JA Total Power Dissipation (Note 6) Steady State 390 mW P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 317 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage V BVDSS -20 V = 0V, I = -250A GS D Zero Gate Voltage Drain Current A I -1 V = -16V, V = 0V DSS DS GS Gate-Source Leakage A I 10 V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V V -0.4 -1.0 V = V , I = -250A GS(TH) DS GS D 1.9 V = -4.5V, I = -100mA GS D 2.4 V = -2.5V, I = -50mA GS D Static Drain-Source On-Resistance R DS(ON) 3.4 V = -1.8V, I = -20mA GS D 5.0 V = -1.5V, I = -10mA GS D Diode Forward Voltage V -0.6 -1.1 V SD V = 0V, I = -10mA GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 28.7 pF iss V = -15V, V = 0V, DS GS Output Capacitance C 4.2 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.9 pF rss Gate Resistance R 399 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge nC Q 0.4 g V = -4.5V, V =- 10V, GS DS Gate-Source Charge nC Q 0.08 gs I = -250mA D Gate-Drain Charge nC Q 0.06 gd Turn-On Delay Time ns t 5.8 D(ON) Turn-On Rise Time ns t 5.7 V = -15V, V = -4.5V, R DD GS Turn-Off Delay Time ns R = 2, I = -200mA t 31.1 G D D(OFF) Turn-Off Fall Time ns t 16.4 F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.10s pulse duty cycle = 1% 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP22D4UFO January 2019 Diodes Incorporated www.diodes.com Document number: DS39194 Rev. 4 - 2