DMP22D6UT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features Mechanical Data
Low On-Resistance Case: SOT-523
Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Low Input Capacitance
Moisture Sensitivity: Level 1 per J-STD-020D
Fast Switching Speed
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Low Input/Output Leakage
Solderable per MIL-STD-202, Method 208
Lead Free By Design/RoHS Compliant (Note 2)
Terminal Connections: See Diagram
ESD Protected Gate
Marking Information: See Page 3
Gree Device (Note 4)
Ordering Information: See Page 3
Qualified to AEC-Q101 standards for High Reliability
Weight: 0.002 grams (approximate)
Drain
SOT-523
D
Gate
Gate
G S
Protection
Source
Diode
ESD PROTECTED
TOP VIEW
Equivalent Circuit TOP VIEW
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage V -20 V
DSS
Gate-Source Voltage V 8 V
GSS
T = 25C
Drain Current (Note 1) Steady -430
A
mA
I
D
State -310
T = 85C
A
Pulsed Drain Current (Note 3) I -750 mA
DM
Thermal Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 1) P 150 mW
D
Thermal Resistance, Junction to Ambient R 833 C/W
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250mA
DSS GS D
Zero Gate Voltage Drain Current I -1.0 A V = -20V, V = 0V
DSS DS GS
Gate-Source Leakage
I 1.0 A V = 4.5V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V -0.5 -1.0 V V = V , I = -250A
GS(th) DS GS D
V = -4.5V, I = -430mA
0.7 1.1 GS D
Static Drain-Source On-Resistance R 1.1 1.6 V = -2.5V, I = -300mA
DS (ON) GS D
1.7 2.6
V = -1.8V, I = -150mA
GS D
Forward Transfer Admittance 200 ms
|Y | V =10V, I = 0.2A
fs DS D
Diode Forward Voltage (Note 5) -1.4 V V = 0V, I = -115mA
V GS S
SD
DYNAMIC CHARACTERISTICS
Input Capacitance C 175 pF
iss
V = -16V, V = 0V
DS GS
Output Capacitance C 30 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 20 pF
C
rss
Notes: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10S, Duty Cycle 1%
4. Diodes Inc.s Green policy can be found on our website at
DMP22D6UT
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
-V , GATE-SOURCE VOLTAGE (V)
DS
GS
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
T , AMBIENT TEMPERATURE (C)
-I , DRAIN-SOURCE CURRENT (A)
A D
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
-I , DRAIN-SOURCE CURRENT (A) -I , DRAIN-SOURCE CURRENT (A)
D D
Fig. 5 Static Drain-Source On-Resistance Fig. 6 Static Drain-Source On-Resistance vs.
vs. Drain Current Drain-Source Current
2 of 4 November 2008
DMP22D6UT
Diodes Incorporated
www.diodes.com
Document number: DS31585 Rev. 2 - 2
NEW PRODUCT
-V , GATE THRESHOLD VOLTAGE (V)
GS(th)
-I , DRAIN CURRENT (A)
D
-I , DRAIN CURRENT (A)
D