DMP22M2UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I Thermally Efficient Package Cooler Running Applications D BV R max DSS DS(ON) T = +25C High Conversion Efficiency C Low R Minimizes On State Losses 2.5m V = -10V -60A DS(ON) GS -20V <1.1mm Package Profile Ideal for Thin Applications 3.5m V = -4.5V -60A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation P-Channel Enhancement Mode MOSFET is Mechanical Data designed to minimize R and yet maintain superior switching DS(ON) Case: POWERDI5060-8 performance. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Load Switch Solderable per MIL-STD-202, Method 208 Notebook Battery Power Management Weight: 0.097 grams (Approximate) D POWERDI5060-8 S D S D D G S D G S Pin1 Top View Internal Schematic Top View Pin Configuration Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP22M2UPS-13 POWERDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP22M2UPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage V 12 V GSS Steady State T = +25C -60 C A (Note 6) -60 T = +70C C Continuous Drain Current, V = 10V (Note 5) I GS D T = +25C -42 A t<10s A -33.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Steady State T = +25C -60 A C (Note 6) Continuous Body Diode Forward Current (Note 5) I S t<10s -5.6 A T = +25C A Avalanche Current, L = 0.1mH I -37 A AS Avalanche Energy, L = 0.1mH 69.8 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Steady State 2.3 Total Power Dissipation (Note 5) W P D t<10s 6.25 Steady State 55 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 20 Total Power Dissipation (Note 5) Steady State 104 W P D Thermal Resistance, Junction to Case (Note 5) R 0.9 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Package limited. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMP22M2UPS May 2015 Diodes Incorporated www.diodes.com Document number: DS37857 Rev. 2 - 2