A Product Line of Diodes Incorporated DMP2305UVT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance Max I D Max R DS(on) V (BR)DSS Low On-Resistance (Note 6) T = 25C A Fast Switching Speed 60m V = -4.5V -4.23A GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -20V 90m V = -2.5V -3.49A GS Halogen and Antimony Free. Green Device (Note 3) 113m V = -1.8V -3.11A GS Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) Case: TSOT26 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.0013 grams (approximate) Motor Control Power management functions Analog Switch D TSOT26 DD1 6 G DD2 5 GS3 4 S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMP2305UVT-7 2305 7 8 3,000 DMP2305UVT-13 2305 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated DMP2305UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 8 V V GSS Steady T = +25C -4.23 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -2.98 T = +70C A T = +25C Steady A -3.49 A Continuous Drain Current (Note 6) V = -2.5V I GS D State -2.79 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -4.23 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -16 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 1.25 Total Power Dissipation W P D (Note 6) 1.64 (Note 5) 100 Thermal Resistance, Junction to Ambient R JA (Note 6) 76 C/W Thermal Resistance, Junction to Case (Note 6) 14 R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 8 August 2012 DMP2305UVT Diodes Incorporated www.diodes.com Document number: DS35986 Rev. 1 - 2