DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max D Low R Ensures On State Losses are Minimized DS(ON) BV R Max DSS DS(ON) T = +25C C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m V = -10V -50A GS -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m V = -4.5V -36A GS Smaller End Product HBM ESD Protection Level of 8kV Typical Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Case: V-DFN3333-8 (Type B) Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Below Diagram Backlighting Terminals: Finish NiPdAu over Copper Leadframe. Power Management Functions e4 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.030 grams (Approximate) D Pin 1 S S S G G D D ESD PROTECTED D Gate Protection D S Diode Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP3007SCG-7 V-DFN3333-8 (Type B) 2,000/Tape & Reel DMP3007SCG-13 V-DFN3333-8 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3007SCG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage 25 V V GSS Steady T = +25C -50 C Continuous Drain Current (Note 7) V = -10V I A GS D State T = +70C -40 C Maximum Continuous Body Diode Forward Current (Note 7) I -40 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Avalanche Current (Note 8) L = 1mH -16 A I AS Avalanche Energy (Note 8) L = 1mH 130 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.0 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 124 C/W R JA Total Power Dissipation (Note 6) T = +25C P 2.4 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 52 C/W JA Thermal Resistance, Junction to Case (Note 7) R 4.0 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage 10 A IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(TH) DS GS D 5.7 6.8 V = -10V, I = -11.5A GS D Static Drain-Source On-Resistance m R DS(ON) 8.0 13 V = -4.5V, I = -8.5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2,826 pF iss V = -15V, V = 0V, DS GS Output Capacitance C 606 pF oss f = 1.0MHz Reverse Transfer Capacitance 305 pF Crss Gate Resistance R 23 V = 0V, V = 0V, f = 1.0MHz g DS GS 31.2 nC Total Gate Charge (VGS = -4.5V) Qg Total Gate Charge (V = -10V) Q 64.2 nC GS g V = -15V, I = -11.5A DS D Gate-Source Charge 10.6 nC Qgs Gate-Drain Charge Q 11.6 nC gd Turn-On Delay Time 4.8 ns tD(ON) Turn-On Rise Time t 4.3 ns R V = -15V, V = -10V, DD GS Turn-Off Delay Time 306 ns R = 6, I = -11.5A tD(OFF) g D Turn-Off Fall Time t 125 ns F Reverse Recovery Time 19 ns tRR I = -11.5A, dI/dt = 100A/s S Reverse Recovery Charge Q 9.8 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3007SCG September 2016 Diodes Incorporated www.diodes.com Document number: DS38990 Rev. 3 - 2 ADVANCE INFORMATION