DMP3007SFG Green 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits I Max Low R Ensures on State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6m V = -10V -70A GS -30V Occupies Just 33% of the Board Area Occupied By SO-8 Enabling 13m V = -4.5V -45A GS Smaller End Product ESD Protected Gate Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: PowerDI3333-8 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed Over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.030 grams (Approximate) DC-DC Converters D Pin 1 S S S G G D D Gate Protection ESD PROTECTED D S Diode D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP3007SFG-7 PowerDI3333-8 2,000/Tape & Reel DMP3007SFG-13 PowerDI3333-8 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP3007SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -70 C Continuous Drain Current (Note 7) V = -10V I A GS D State -55 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) -3.0 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -120 A I DM Avalanche Current (Notes 8) L = 1mH -16 A I AS Avalanche Energy (Notes 8) L = 1mH E 130 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.2 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 105 C/W JA Total Power Dissipation (Note 6) 2.8 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 45 C/W R JA Thermal Resistance, Junction to Case (Note 7) 3.0 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 4.3 6 V = -10V, I = -11.5A GS D Static Drain-Source On-Resistance R m DS(ON) 6.6 13 V = -4.5V, I = -8.5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 2826 pF C iss V = -15V, V = 0V, DS GS Output Capacitance 606 pF C oss f = 1.0MHz Reverse Transfer Capacitance 305 pF C rss Gate Resistance R 23 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q 31.2 nC GS g Total Gate Charge (V = -10V) Q 64.2 nC GS g V = -15V, I = -11.5A DS D Gate-Source Charge Q 10.6 nC gs Gate-Drain Charge Q 11.6 nC gd Turn-On Delay Time t 4.8 ns D(ON) Turn-On Rise Time 4.3 ns tR V = -15V, V = -10V, DD GS Turn-Off Delay Time 306 ns R = 6, I = -11.5A t g D D(OFF) Turn-Off Fall Time 125 ns t F Reverse Recovery Time t 19 ns RR I = -11.5A, dI/dt = 100A/s S Reverse Recovery Charge Q 9.8 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMP3007SFG September 2016 Diodes Incorporated www.diodes.com Document number: DS39018 Rev. 2 - 2 ADVANCE INFORMATION