DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R Minimizes On-State Losses DS(ON) I Max D BV R Max Small Form Factor Thermally Efficient Package Enables Higher DSS DS(ON) T = +25C C Density End Products 7m V = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability GS -30V ESD Protected Gate 16m V = -4.5V -60A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI5060-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D ESD PROTECTED S D PowerDI5060-8 S Pin1 D G S D D G Gate Protection S Diode Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP3007SPS-13 2,500/Tape & Reel PowerDI5060-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP3007SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C -90 C Continuous Drain Current, V = -10V (Note 7) I A GS D -70 T = +70C C Maximum Continuous Body Diode Forward Current (Note 7) -90 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -160 A I DM Avalanche Current, L=1mH (Note 8) -16 A I AS Avalanche Energy, L=1mH (Note 8) E 130 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.4 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 90 C/W R JA Total Power Dissipation (Note 6) T = +25C P 2.7 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 47 C/W R JA Total Power Dissipation (Note 7) T = +25C P 80 W C D Thermal Resistance, Junction to Case (Note 7) 1.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 4.5 7 V = -10V, I = -15A GS D Static Drain-Source On-Resistance R m DS(ON) 12 16 V = -4.5V, I = -10A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 2,826 pF C iss V = -15V, V = 0V, DS GS Output Capacitance C 606 pF oss f = 1.0MHz Reverse Transfer Capacitance C 305 pF rss Gate Resistance R 23 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q 31.2 nC GS g Total Gate Charge (V = -10V) Q 64.2 nC GS g V = -15V, I = -11.5A DS D Gate-Source Charge Q 10.6 nC gs Gate-Drain Charge Q 11.6 nC gd Turn-On Delay Time 4.8 ns t D(ON) Turn-On Rise Time 4.3 ns t R VDD = -15V, VGS = -10V, Turn-Off Delay Time 306 ns R = 6, I = -11.5A t g D D(OFF) Turn-Off Fall Time 125 ns t F Reverse Recovery Time t 19 ns RR I = -11.5A, dI/dt = 100A/s S Reverse Recovery Charge Q 9.8 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3007SPS September 2016 Diodes Incorporated www.diodes.com Document number: DS39051 Rev.3 - 2 NEW PRODUCT ADVANCE INFORMATION