DMP3010LPS Green P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features I D Thermally Efficient Package Cooler Running Applications V R (BR)DSS DS(ON) T = +25C A High Conversion Efficiency -36A 7.5m V = -10V GS Low Minimizes On-State Losses RDS(ON) -30V -31A 10m V = -4.5V GS Low Input Capacitance Fast Switching Speed Description <1.1mm Package Profile Ideal for Thin Applications ESD HBM Protected up to 1kV This new generation 30V P-Channel Enhancement Mode MOSFET is Lead-Free Finish RoHS Compliant (Notes 1 & 2) designed to minimize R , yet maintain superior switching DS(ON) Halogen and Antimony Free. Green Device (Note 3) performance. This device is ideal for use in notebook battery power Qualified to AEC-Q101 Standards for High Reliability management and loadswitch. Applications Mechanical Data Notebook Battery Power Management Case: PowerDI5060-8 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. Loadswitch UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 Pin1 G S Top View Top View Pin Configuration Internal Schematic Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging DMP3010LPS-13 Standard PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP3010LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -36 A Continuous Drain Current (Note 7) V = 10V I A GS D State -29 T = +70C A T = +25C Steady A -31 A Continuous Drain Current (Note 7) V = 4.5V I GS D State -25 T = +70C A Steady T = +25C -14.5 A Continuous Drain Current (Note 6) V = 10V I A GS D State -11.5 T = +70C A Pulsed Drain Current (Notes 6 & 9) I -100 A DM Avalanche Current (Notes 10 & 11) I -17.5 A AS Avalanche Energy (Notes 10 & 11) L = 1mH 153 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.26 W D 97 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Power Dissipation (Note 6) 2.18 W P D 55 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Power Dissipation (Note 7) 14.37 W P D 8.7 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 7) R A JA Power Dissipation (Notes 7 & 8) 58.7 W P D Thermal Resistance, Junction to Case T = +25C (Notes 7 & 8) R 2.13 C/W C JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 11) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1.0 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 11) Gate Threshold Voltage V -1.1 -1.6 -2.1 V V = V , I = -250A GS(th) DS GS D 5.7 7.5 V = -10V, I = -10A GS D Static Drain-Source On-Resistance m R DS(ON) 7.2 10 V = -4.5V, I = -10A GS D Forward Transfer Admittance Y 30 S V = -15V, I = -10A fs DS D Diode Forward Voltage -0.65 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance 6,234 pF C iss V = 15V, V = 0V, DS GS Output Capacitance 1,500 pF C oss f = 1.0MHz Reverse Transfer Capacitance 774 pF C rss Gate Resistance 1.28 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -10V) Q 126.2 nC V = -15V, I = -10A GS g DS D Total Gate Charge (V = -4.5V) Q 59.2 nC GS g V = -15V, V = -4.5V, DS GS Gate-Source Charge Q 16.1 nC gs I = -10A D Gate-Drain Charge Q 15.7 nC gd Turn-On Delay Time t 11.4 ns D(on) Turn-On Rise Time 9.4 ns t V = -15V, V = -10V, r DS GEN Turn-Off Delay Time 260.7 ns R = 6, I = -1A t G D D(off) Turn-Off Fall Time 99.3 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on FR-4 PCB with infinite heatsink. 8. R is guaranteed by design while R is determined by the users board design. JC CA 9. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 10. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 11. Short duration pulse test used to minimize self-heating effect. 12. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3010LPS November 2015 Diodes Incorporated www.diodes.com Document number: DS32239 Rev. 12 - 2