DMP3015LSSQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Max ID BV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 11m V = -10V -13A GS Fast Switching Speed -30V Low Input/Output Leakage 17m V = -4.5V -9.9A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ) yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Backlighting Terminals: FinishMatte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074g (Approximate) SO-8 D S D S D G S D G D S Top View Top View Equivalent Circuit Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP3015LSSQ-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP3015LSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 6) Steady T = +25C -13 A A I D State -9.75 T = +70C A Pulsed Drain Current (Note 7) -45 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 2.5 W P D Thermal Resistance, Junction to Ambient R 50 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on 2 oz. Copper pads on FR-4 PCB with R = +50C/W. JA 7. Pulse width 10S, Duty Cycle 1%. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1 -2 V V V = V , I = -250A GS(th) DS GS D 9 11 V = -10V, I = -13A GS D Static Drain-Source On-Resistance R m DS(ON) 14 17 V = -4.5V, I = -10A GS D Forward Transconductance 15 S gfs VDS = -15V, ID = -8A Diode Forward Voltage (Note 8) -0.5 -1.1 V V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,748 pF C iss V = -20V, V = 0V DS GS Output Capacitance 357 pF C oss f = 1.0MHz Reverse Transfer Capacitance 356 pF C rss V = 0V, V = 0V DS GS Gate Resistance 2.0 RG f = 1.0MHz SWITCHING CHARACTERISTICS (Note 9) 30.0 V = -10V, V = -4.5V, I = -13A DS GS D Total Gate Charge Q g 60.4 V = -10V, V = -10V, I = -13A DS GS D nC Gate-Source Charge 7.2 Q V = -10V, V = -10V, I = -13A gs DS GS D Gate-Drain Charge 16.4 Q V = -10V, V = -10V, I = -13A gd DS GS D Turn-On Delay Time 11.2 t d(on) Rise Time 12.4 t V = -15V, V = -10V, r DS GS nS Turn-Off Delay Time t 104.9 I = -1A, R = 6.0 d(off) D G Fall Time t 61.7 f Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 November 2018 DMP3015LSSQ Diodes Incorporated www.diodes.com Document number: DS38013 Rev. 3 - 2