DMP3018SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on)max Low Input Capacitance T = +25C A 14.5m V = -10V -10.2A Low Input/Output Leakage GS -30V 25.5m V = -4.5V -7.7A GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high-efficiency power management applications. Case: U-DFN2523-6 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e4 Weight: 0.008 grams (Approximate) D U-DFN2523-6 Pin 1 G Pin 1, 2 = Source Pin 3 = Gate Pin 4, 5, 6 = Drain Gate Protection S ESD PROTECTED Diode Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP3018SFK-7 U-DFN2523-6 3,000/Tape & Reel DMP3018SFK-13 U-DFN2523-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See DMP3018SFK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -10.2 A A Continuous Drain Current (Note 6) V = -10V I GS D State -8.1 T = +70C A Steady T = +25C -7.7 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State T = +70C -6.1 A Maximum Continuous Body Diode Forward Current (Note 6) I -3 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -80 A DM Avalanche Current (Note 7) -14 A I AS Avalanche Energy (Note 7) 104 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1 W D Thermal Resistance, Junction to Ambient (Note 5) 123 C/W R JA Total Power Dissipation (Note 6) 2.2 W P D Thermal Resistance, Junction to Ambient (Note 6) 55 C/W R JA Total Power Dissipation (Note 6) 17 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) R 7.2 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -10mA DSS GS D -1 Zero Gate Voltage Drain Current T = +25C J I A V = -24V, V = 0V DSS DS GS Zero Gate Voltage Drain Current T = +150C (Note 9) -100 J Gate-Source Leakage I 10 A V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -1.6 -3 V V = V , I = -250A GS(th) DS GS D 9.5 14.5 V = -10V, I = -9.5A GS D Static Drain-Source On-Resistance R m DS(ON) 15 25.5 V = -4.5V, I = -6.9A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S On State Drain Current (Note 9) A I -20 VDS -5V, V = -10V D(ON) GS DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,207 C 4,414 iss V = -15V, V = 0V, DS GS Output Capacitance 390 pF C 780 oss f = 1MHz Reverse Transfer Capacitance 343 C 686 rss Gate Resistance 8.4 R 20 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -10V) Q 42.7 90 GS g Total Gate Charge (V = -4.5V) Q 21.6 45 GS g nC V = -15V, I = -9.5A DS D Gate-Source Charge Q 7.9 16 gs Gate-Drain Charge Q 10 20 gd 15 Turn-On Delay Time t 7.35 D(on) 30 Turn-On Rise Time t 16.4 r V = -15V, V = -10V, DD GS ns Turn-Off Delay Time 67.2 110 R = 6 , I = -9.5A t GEN D D(off) Turn-Off Fall Time 37.5 60 t f Reverse Recovery Time 18.6 35 ns t rr I = -9.5A, di/dt = 100A/s S Reverse Recovery Charge 8.6 17.5 nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. UIS in production with L = 1mH, T = +25C. J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 January 2015 DMP3018SFK Diodes Incorporated www.diodes.com Document number: DS37604 Rev. 2 - 2 ADVANCE INFORMATION ADVANCED INFORMATION