DMP3018SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 12m V = -10V -10.5A GS ESD Protected Gate -30V 100% Unclamped Inductive Switching (UIS) Test in Production 21m V = -4.5V -8.0A GS Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: SO-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram Below DC-DC Converters Terminals: Finish Matte Tin Annealed Over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 D S D S D G S D ESD PROTECTED D G Gate Protection S Diode Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP3018SSS-13 2,500/Tape & Reel SO-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP3018SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -10.5 A Continuous Drain Current (Note 6) V = -10V I A GS D State -8.5 T = +70C A Steady T = +25C -25 C A Continuous Drain Current (Note 6) V = -10V I GS D State -20 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) I -20 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -90 A DM Avalanche Current (Note 7) L = 1mH I -14 A AS Avalanche Energy (Note 7) L = 1mH E 104 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.2 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 101 C/W JA Total Power Dissipation (Note 6) T = +25C P 1.7 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 73 C/W JA Total Power Dissipation (Note 6) P 10 W D Thermal Resistance, Junction to Case (Note 6) R 12.5 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 8.7 12 V = -10V, I = -11.5A GS D Static Drain-Source On-Resistance m R DS(ON) 14.5 21 V = -4.5V, I = -8.5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance pF C 2,147 iss V = -15V, V = 0V, DS GS Output Capacitance pF C 407 oss f = 1.0MHz Reverse Transfer Capacitance pF C 358 rss Gate Resistance 24 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -5V) Q 28 nC GS g Total Gate Charge (V = -10V) Q 51 nC GS g V = -15V, I = -11.5A DS D Gate-Source Charge Q 6.6 nC gs Gate-Drain Charge Q 15 nC gd Turn-On Delay Time t ns D(ON) 7.8 Turn-On Rise Time ns V = -15V, V = -10V, t 19.9 DD GS R Turn-Off Delay Time ns t 57.5 R = 6, I = -11.5A D(OFF) G D Turn-Off Fall Time ns t 42.8 F Reverse Recovery Time 21.5 ns t RR I = -11.5A, dI/dt = 100A/s S Reverse Recovery Charge 11.6 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3018SSS August 2019 Diodes Incorporated www.diodes.com Document number: DS40423 Rev. 4 - 2