DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Input Capacitance D V R (BR)DSS DS(on) max T = +25C A Low On-Resistance 25m V = -10V -6.8A GS -30V Fast Switching Speed -5.0A 38m V = -4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(on) Mechanical Data making it ideal for high efficiency power management applications. Case: U-DFN2020-6 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Load Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) U-DFN2020-6 D 6 D D 1 G 5 D D 2 4 S S G 3 S Pin Out Bottom View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP3028LFDE-7 U-DFN2020-6 3,000/Tape & Reel DMP3028LFDE-13 U-DFN2020-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3028LFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -6.8 A I A D State -5.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C A -8.2 t<10s A I D -6.6 T = +70C A Maximum Body Diode Forward Current (Note 6) -2.5 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) -40 A I DM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units T = +25C 0.66 A Total Power Dissipation (Note 5) W P D T = +70C 0.42 A Steady State 189 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 125 T = +25C 2.03 A Total Power Dissipation (Note 6) W P D T = +70C 1.3 A Steady State 61 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 41 C/W Thermal Resistance, Junction to Case (Note 6) 9.3 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1.2 -2.4 V V V = V , I = -250A GS(th) DS GS D 20 25 V = -10V, I = -7A GS D Static Drain-Source On-Resistance R m DS (ON) 29 38 V = -4.5V, I = -6.2A GS D Forward Transfer Admittance 4.5 S Y V = -5V, I = -7A fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = -2.1A SD GS S On State Drain Current (Note 8) ID(ON) -20 A V -5V, V = -4.5V DS GS DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1241 1860 iss V = -15V, V = 0V DS GS Output Capacitance C 147 220 pF oss f = 1.0MHz Reverse Transfer Capacitance C 110 165 rss Gate Resistance R 15 30 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 22 33 GS g 10.9 17 Total Gate Charge (V = 4.5V) Q GS g nC V = -15V, I = -7A DS D Gate-Source Charge 3.5 6 Q gs Gate-Drain Charge 4.7 8 Q gd Turn-On Delay Time 9.7 15 t D(on) Turn-On Rise Time t 17.1 26 V = -10V, V = -15V, R = 6, r GS DD GEN nS Turn-Off Delay Time t 60.5 91 I = -7A D(off) D Turn-Off Fall Time t 40.4 61 f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3028LFDE October 2014 Diodes Incorporated www.diodes.com Document number: DS35965 Rev. 7 - 2 ADVANCE INFORMATION